Abstract
The type of substrate used for the formation of n-type layers in GaAs by ion implantation has a pronounced effect on the electrical properties of the implanted and annealed layers. Certain Cr-doped semi-insulating substrates exhibit a marked decrease in sheet resistance during the anneal cycle. We find that the carrier concentration of the converted material increases with the background Si concentration in the starting material. The carrier concentration profile and mobility of implanted and annealed GaAs are dependent on the substrate. The most reproducible and the highest quality layers with regard to mobility and carrier profile are obtained in high purity LPE or high purity bulk starting material. Results from 13 high purity ingots, grown during a one-year period at HP, demonstrate the quality and reproducibility of the layers produced by direct implantation into these substrates.
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References
Higgins, J.A., Kuvas, R.L., Eisen, F.H. and Chen, D.R. (1978). IEEE Trans. Elec. Dev., ED-25, 587
Cox, H.M., DiLorenzo, J.V. and D’Asaro, L.A. (Sept. 1979). GaAs IC Symposium, Lake Tahoe, Nev., paper 12
Stolte, C.A. (1975). IEDM Dig. Tech. Pap., p. 585. New York; IEEE
Mayer, J.W., Erickson, L. and Davies, J.A. (1970). Ion Implantation in Semiconductors, p. 186. New York; Academic Press
Evans, C.A. Jr, Deline, V.R., Sigmon, T.W. and Lidow, A. (1979). Appl. Phys. Lett., 35, 291
Tuck, B., Adegboyega, G.A., Jay, P.R. and Cardwell, M.J. (1978). Inst. Phys. Conf. Ser., 48, 114
Asbeck, P., Tandon, J., Siu, D., Fairman, R., Welch, B., Evans, C.A. Jr and Deline, V.R. (Sept. 1979). GaAs IC Symposium, Lake Tahoe, Nev., paper 14
Ford, W.M. To be published
Rode, D.L. and Knight, S. (1971). Phys. Rev. B, 3, 2534
Swiggard, E.M., Lee, S.H. and Von Batchelder, F.W. (1978). Inst. Phys. Conf. Ser., 48, 125
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© 1980 C.A. Stolte
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Stolte, C.A. (1980). The Influence of Substrate Properties on the Electrical Characteristics of Ion-Implanted GaAs. In: Rees, G.J. (eds) Semi-Insulating III–V Materials. Birkhäuser Boston. https://doi.org/10.1007/978-1-4684-9193-7_9
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DOI: https://doi.org/10.1007/978-1-4684-9193-7_9
Publisher Name: Birkhäuser Boston
Print ISBN: 978-1-4684-9195-1
Online ISBN: 978-1-4684-9193-7
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