Growth and Characterization of Semi-Insulating GaAs for Use in Ion Implantation
A review of semi-insulating GaAs produced by three current bulk growth technologies has been made in which the electrical properties of the resultant semi-insulating GaAs have been studied in detail. High resistivity GaAs grown by liquid encapsulated Czochralski techniques is contrasted with horizontal Bridgman and gradient freeze materials. Both undoped and chromium-compensated materials have been studied. Materials qualification for ion implantation as determined by measurement of resistivity, thermal stability and active ion implant distributions will be described. Degree of impurity activation and relationship to LSS range statistics are discussed for selenium ion implants. Assessment of deep centres with concentration <1014 cm-3 have been made on high resistivity samples using photo-induced current transient and dark conductivity versus temperature measurements. Impurity redistribution effects resulting from thermal annealing with Si3N4 capping layers are assessed by analysis with secondary ion mass spectroscopy (SIMS). Conclusions drawn from qualification tests, electrical transport and mass spectrographs measurements are correlated with the specific materials growth method used.
KeywordsSheet Resistance Dark Conductivity Carrier Profile Liquid Encapsulate Czochralski Technique High Resistivity Sample
Unable to display preview. Download preview PDF.
- 3.Henry, R.L. and Swiggard, E.M. (1977). Inst. Phys. Conf. Ser., 33b, 28Google Scholar
- 4.Rumsby, D. (1979). IEEE Workshop on Compound Semiconductors for Microwave Materials and Devices, AtlantaGoogle Scholar
- 5.Aucoin, T.R., Ross, R.L., Wade, M.J. and Savage, R.O. (1979). Sol. St. Tech., 22, 59Google Scholar
- 6.Ware, R.M. (1979). Int. Conf. Crystal Growth, ICCG-5, BostonGoogle Scholar
- 8.Tuck, B., Adegboyega, G.A., Jay, P.R. and Cardwell, M.J. (1979). Inst. Phys. Conf. Ser., 45, 114Google Scholar