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High Resistivity Layers in GaP, GaAs and GaAsP Using Electron Bombardment

  • Takao Wada
  • Sashiro Uemura
  • Noboru Kitamura

Abstract

High energy (1 and 7 MeV) electron bombardment produced high resistivity layers in GaP, GaAs and GaAsP crystals, and changed the GaP crystal from orange to black. The Laue pattern of the wafer remained unchanged by bombardment. The process is useful for electrically and optically isolating GaP junction devices.

Keywords

Irradiation Flux Electron Bombardment Lead Array Cathodoluminescent Image Scan Electron Beam 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    Wada, T. and Uemura, S. (1975). Tech. of Int. Electron Devices Meeting, Washington, DC, p. 192;Google Scholar
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    Wada, T. and Uemura, S. (1977) Tech. of Int. Electron Devices Meeting, Washington, DC, p. 486,Google Scholar
  3. 1b.
    Wada, T., Uemura, S., Kakehi, M. and Kitamura, N. (1978) Tech. of Int. Electron Devices Meeting, Washington, DC, p. 638Google Scholar
  4. 2.
    Brailovskii, E.Yu, Braundnyi, V.N. and Groza, A.A. (1972). Inst. Phys. Conf. Ser., 16, 121Google Scholar
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    Wada, T., Yasuda, K., Ikuta, S., Takeda, M. and Masuda, H. (1977). J. Appl. Phys., 48, 2145CrossRefGoogle Scholar
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    Lang, D.V. and Kimerling, L.C. (1975). Inst. Phys. Conf. Ser., 23, 581Google Scholar

Copyright information

© T. Wada, S. Uemura, N. Kitamura 1980

Authors and Affiliations

  • Takao Wada
    • 1
  • Sashiro Uemura
    • 1
    • 2
  • Noboru Kitamura
    • 1
  1. 1.Department of Electrical EngineeringMie UniversityKamihama, Tsu, 514Japan
  2. 2.Ise Electronics Central LaboratoryTsumura, IseJapan

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