High Resistivity Layers in GaP, GaAs and GaAsP Using Electron Bombardment

  • Takao Wada
  • Sashiro Uemura
  • Noboru Kitamura

Abstract

High energy (1 and 7 MeV) electron bombardment produced high resistivity layers in GaP, GaAs and GaAsP crystals, and changed the GaP crystal from orange to black. The Laue pattern of the wafer remained unchanged by bombardment. The process is useful for electrically and optically isolating GaP junction devices.

Keywords

GaAs 

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References

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    Wada, T. and Uemura, S. (1975). Tech. of Int. Electron Devices Meeting, Washington, DC, p. 192;Google Scholar
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Copyright information

© T. Wada, S. Uemura, N. Kitamura 1980

Authors and Affiliations

  • Takao Wada
    • 1
  • Sashiro Uemura
    • 1
    • 2
  • Noboru Kitamura
    • 1
  1. 1.Department of Electrical EngineeringMie UniversityKamihama, Tsu, 514Japan
  2. 2.Ise Electronics Central LaboratoryTsumura, IseJapan

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