High Resistivity Layers in GaP, GaAs and GaAsP Using Electron Bombardment
High energy (1 and 7 MeV) electron bombardment produced high resistivity layers in GaP, GaAs and GaAsP crystals, and changed the GaP crystal from orange to black. The Laue pattern of the wafer remained unchanged by bombardment. The process is useful for electrically and optically isolating GaP junction devices.
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- 1.Wada, T. and Uemura, S. (1975). Tech. of Int. Electron Devices Meeting, Washington, DC, p. 192;Google Scholar
- 1a.Wada, T. and Uemura, S. (1977) Tech. of Int. Electron Devices Meeting, Washington, DC, p. 486,Google Scholar
- 1b.Wada, T., Uemura, S., Kakehi, M. and Kitamura, N. (1978) Tech. of Int. Electron Devices Meeting, Washington, DC, p. 638Google Scholar
- 2.Brailovskii, E.Yu, Braundnyi, V.N. and Groza, A.A. (1972). Inst. Phys. Conf. Ser., 16, 121Google Scholar
- 5.Lang, D.V. and Kimerling, L.C. (1975). Inst. Phys. Conf. Ser., 23, 581Google Scholar