High Resistivity Layers in GaP, GaAs and GaAsP Using Electron Bombardment
High energy (1 and 7 MeV) electron bombardment produced high resistivity layers in GaP, GaAs and GaAsP crystals, and changed the GaP crystal from orange to black. The Laue pattern of the wafer remained unchanged by bombardment. The process is useful for electrically and optically isolating GaP junction devices.
KeywordsIrradiation Flux Electron Bombardment Lead Array Cathodoluminescent Image Scan Electron Beam
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