Advertisement

Semi-Insulating GaAs — a User’s View

  • R. Zucca
  • B. M. Welch
  • P. M. Asbeck
  • R. C. Eden
  • S. I. Long

Abstract

The extraordinary progress which has taken place in GaAs digital IC technology over the last two years is reviewed, highlighting the role of the semi-insulating substrate. The most critical requirements of the material are discussed in the context of current circuit fabrication techniques. At the same time, recent advances in the fundamental knowledge of the material are briefly reviewed and weighted according to their impact on the technology.

Keywords

June Issue Carrier Concentration Profile Depletion Voltage Digital Integrate Circuit Vapour Phase Epita 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Eden, R.C. Welch, B.M., Zucca, R. and Long, S.I. (1979). IEEE J. Solid St. Circ, 14, 221CrossRefGoogle Scholar
  2. 2.
    Liechti, C.A. (1976). IEEE MTT Trans., 24, 279CrossRefGoogle Scholar
  3. 2a Liechti, CA. Higgins, J.A., Kuvas, R.L., Eisen, F.R. and Ch’en, D.R. (1978). IEEE Trans. Electr. Dev. 25, 587CrossRefGoogle Scholar
  4. 3.
    Macksey, H.M. Adams, R.L., McQuiddy, D.N., Shaw, D.W. and Wisseman, W.R. (1977). IEEE Trans. Electr. Dev. 24, 113Google Scholar
  5. 3a Mackesy, H.M. Adams, R.L., McQuiddy, D.N., Shaw, D.W. and Wisseman, W.R. Immorlica, A.A., Ch’en, D.R., Decker, D.R. and Fairman, R.D. (1979). Proc. 7th Biennial Cornell Electrical Engineering Conf., in pressGoogle Scholar
  6. 4.
    Van Tuyl, R.L., Liechti, C.A., Lee, R.E. and Gowen, E. (1977). IEEE J. Solid. St. Circ, 12, 485CrossRefGoogle Scholar
  7. 5.
    Long, S.I., Lee, F.S., Zucca, R., Welch, B.M. and Eden, R.C. (1980). IEEE MTT Trans., June issue, in pressGoogle Scholar
  8. 6.
    Higgins, J.A., Gupta, A., Robinson, J. and Ch’en, D.R. (1979). IEEE Int. Solid State Conf., Digest Tech. Papers, 120;Google Scholar
  9. 6a.
    Higgins, I.A., Gupta, A., Robinson, J. and Ch’en, D.R. Gupta, A.K., Higgins, J.A. and Decker, D.R. (1979). IEDM, Digest Tech. Papers, 269Google Scholar
  10. 7.
    Deyhimy, I., Eden, R.C., Anderson, P.J. and Harris, J.F. (1980). Appl. Phys. Lett., 36, 151CrossRefGoogle Scholar
  11. 8.
    Welch, B.M., Shen, Y.D., Zucca, R., Eden, R. C and Long, S.I. (1980). IEEE Trans. Electr. Dev., June issue, in pressGoogle Scholar
  12. 9.
    Editorial (1980). Electronics, 53, 202Google Scholar
  13. 10.
    Eden, R.C., Welch, B.M. and Zucca, R. (1978). IEEE J. Solid St. Circ, 13, 419CrossRefGoogle Scholar
  14. 11.
    Zucca, R., Welch, B.M., Eden, R.C. and Long, S.I. (1980). IEEE Trans. Electr. Dev., June issue, in pressGoogle Scholar
  15. 12.
    Asbeck, P., Tandon, J., Babcock, E., Welch, B., Evans, C.A. and Deline, V.R. (1979). IEEE Trans. Electr. Dev. 26, 1853CrossRefGoogle Scholar
  16. 12a.
    Asbeck, P., Tandon, J., Babcock, E., Welch, B., Evans, C.A. and Deline, V.R. Favennec, P.N. and L’Haridon, H. (1979). Appl. Phys. Lett., 35, 699CrossRefGoogle Scholar
  17. 13.
    Asbeck, P.M., Tandon, J., Welch, B.M., Evans, C.A. and Deline, V.R. (1980). IEEE Electr. Dev. Lett., March issue, in pressGoogle Scholar
  18. 14.
    Henry, R.L. and Swiggard, E.M. (1977). Inst. Phys. Conf. Ser., 33b, 29Google Scholar
  19. 15.
    Fairman, R.D. and Oliver, J.R. This volumeGoogle Scholar
  20. 16.
    Magee, T.J., Peng, J., Hong, J.D., Evans, C.A. and Deline, V.R. (1979). Phys. Stat. Sol. (a), 55, 169CrossRefGoogle Scholar
  21. 17.
    Zucca, R. (1977). J. Appl. Phys., 48, 1987CrossRefGoogle Scholar
  22. 17a.
    Zucca, R.,Look, D.C. (1977). J. Appl. Phys., 48, 5141CrossRefGoogle Scholar
  23. 18.
    Rossel, P., Tranduc, H., Graffevil, J., Azizi, C., Nuzfllat, G. and Bert, G. (1978). Rev. Phys. Appl., 13, 503CrossRefGoogle Scholar
  24. 19.
    Zylbersztejn, A., Bert, G. and Nuzillat, G. (1979). Inst. Phys. Conf. Ser., 45, 315Google Scholar
  25. 20.
    Eisen, F.H., Zucca, R. and Welch, B.M. (1979). US Patent 4, 157, 497Google Scholar
  26. 21.
    Tandon, J.L., Nicolet, M.-A. and Eisen, F.H. (1919). Appl. Phys. Lett., 34, 165CrossRefGoogle Scholar
  27. 22.
    Tandon, J.L., Golecki, I., Nicolet, M.-A. Sadana, D.K. and Washburn, J. (1979). Appl. Phys. Lett., 35, 867CrossRefGoogle Scholar
  28. 23.
    Donnelly, J.P. (1977). Inst. Phys. Conf. Ser., 33b, 166Google Scholar
  29. 24.
    Troeger, G.L., Behle, A.F., Frieberthauser, P.E., Hu, K.L. and Watanabe, S.H. (1979). IEDM, Digest Tech. Papers, 497Google Scholar

Copyright information

© R. Zucca, B.M. Welch, P.M. Asbeck, R.C. Eden and S.I. Long 1980

Authors and Affiliations

  • R. Zucca
    • 1
  • B. M. Welch
    • 1
  • P. M. Asbeck
    • 1
  • R. C. Eden
    • 1
  • S. I. Long
    • 1
  1. 1.Rockwell International Electronics Research CenterThousand OaksUSA

Personalised recommendations