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Deep Level Measurements of Layers on Semi-Insulating GaAs Substrates by Means of the Photofet Method

  • F. J. Tegude
  • K. Heime

Abstract

Deep level measurements have been performed on three different types of sample: (l)Sn-doped layers diffused into SI-GaAs:Cr; (2) Sn-doped LPE-GaAs layers on SI-GaAs:Cr; and (3) Sn-doped layers diffused into high resistivity undoped LPE layers on SI-GaAs:Cr. Measurement technique was the PHOTOFET method [1], which monitors changes in Ids of a MESFET with respect to the energy of monochromatic light. The characteristics of the three types of sample are presented and related to trap behaviour, especially near interfaces. Deep traps at the interfaces between active layers and substrates may cause serious degradation of device performance. It appears that a buffer layer (sample type 3) is not always a good way of improving device behaviour.

Keywords

Buffer Layer Active Layer Sample Type Deep Trap Trap Charge 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© F.J. Tegude and K. Heime 1980

Authors and Affiliations

  • F. J. Tegude
    • 1
  • K. Heime
    • 1
  1. 1.FB 9, Solid State Electronics LaboratoryDuisburg UniversityDuisburg 1West Germany

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