Semi-Insulating III–V Materials pp 299-301 | Cite as

# Impact Ionization and Auger effects Involving Traps

## Abstract

In this paper four theoretical models are considered for the discussion of low-field impact ionization and, its inverse process, Auger recombination, involving a single localized level. Four such processes are shown schematically in Table 1, where the corresponding Auger recombination and impact ionization rates are given for non-degenerate statistics. Here, n and p are electron and hole concentrations, n_{t} and p_{t} are concentrations of full and empty traps. The various possibilities are cut down (*a*) by considering only the process specified by X_{1} in Table 1, although the present approach can be used for the other processes shown; and (*b*) by considering the band to be parabolic for energies above the minimum which are of the order of the trap depth, E_{t}. Here the probability P(2’) per unit time per unit volume, that a given energetic electron in a band state 2’ will impact-ionize a bound state of energy -E_{t}, is discussed. The threshold for such a process lies at the electronic kinetic energy E_{2} =E_{t}. For any band having the probability of finding a vacancy at states 1 and 2 (see Table 1) of order unity, and in particular for a non-degenerate band, P(2) is independent of the statistical electron distribution in the band. One can then obtain the impact ionization coefficient *X* _{1}, and the Auger recombination coefficient T_{1} by an integration over the states 2′.

## Keywords

Impact Ionization Auger Recombination Trap Depth Atomic Case Auger Recombination Rate## Preview

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## References

- 1.Landsberg, P.T., Rhys-Roberts, C. and Lal, P. (1964).
*Proc. Phys. Soc.*,**84**, 915CrossRefGoogle Scholar - 2.