Influence of Deep Levels on Schottky Barrier Formation

  • G. P. Srivastava


It is shown that Schottky barrier formation at metal-semiconductor interfaces can be influenced by deep bulk defects. We consider, in particular, the effect of a phosphorus vacancy and also an oxygen substituted at a phosphorus site on the Schottky barrier formation at InP/Al and InP/Ag interfaces. The theoretical Bassani-Iadonisi-Preziosi-Jaros method for dealing with such deep impurities predicts localized and resonant energy levels which are helpful in understanding some recent measurements of the metal-InP interface.


Schottky Barrier Schottky Barrier Height Reactive Metal Conduction Band Minimum Deep Impurity 
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Copyright information

© G.P. Srivastava 1980

Authors and Affiliations

  • G. P. Srivastava
    • 1
  1. 1.Physics DepartmentNew University of UlsterColeraineNorthern Ireland

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