Influence of Deep Levels on Schottky Barrier Formation
It is shown that Schottky barrier formation at metal-semiconductor interfaces can be influenced by deep bulk defects. We consider, in particular, the effect of a phosphorus vacancy and also an oxygen substituted at a phosphorus site on the Schottky barrier formation at InP/Al and InP/Ag interfaces. The theoretical Bassani-Iadonisi-Preziosi-Jaros method for dealing with such deep impurities predicts localized and resonant energy levels which are helpful in understanding some recent measurements of the metal-InP interface.
KeywordsSchottky Barrier Schottky Barrier Height Reactive Metal Conduction Band Minimum Deep Impurity
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- 4.McKinley, A., Srivastava, G.P. and Williams, R.H. (1980). J. Phys. C, in pressGoogle Scholar