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Influence of Deep Levels on Schottky Barrier Formation

  • G. P. Srivastava

Abstract

It is shown that Schottky barrier formation at metal-semiconductor interfaces can be influenced by deep bulk defects. We consider, in particular, the effect of a phosphorus vacancy and also an oxygen substituted at a phosphorus site on the Schottky barrier formation at InP/Al and InP/Ag interfaces. The theoretical Bassani-Iadonisi-Preziosi-Jaros method for dealing with such deep impurities predicts localized and resonant energy levels which are helpful in understanding some recent measurements of the metal-InP interface.

Keywords

Schottky Barrier Schottky Barrier Height Reactive Metal Conduction Band Minimum Deep Impurity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© G.P. Srivastava 1980

Authors and Affiliations

  • G. P. Srivastava
    • 1
  1. 1.Physics DepartmentNew University of UlsterColeraineNorthern Ireland

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