Photoconductivity of Epitaxial GaAs:Cr
An investigation of photoconductivity in epitaxial GaAs:Cr under different illumination levels shows evidence of two levels with optical thresholds at 0.75 and 0.79 eV, and of a broadened trap distribution. Analysis of the spectral dependence of the photoresponse could be carried out, satisfactorily, with our simple model rather than with the Lucovsky model. For the 0.75 eV level we obtained a Huang-Rhys factor of 3, corresponding to a Franck-Condon shift of 0.09 eV and a thermal level at 0.66 eV.
KeywordsPhonon Energy Illumination Level Background Illumination Epitaxial GaAs Thermal Level
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