Photoconductivity of Epitaxial GaAs:Cr

  • M. A. Amato
  • M. C. Arikan
  • B. K. Ridley

Abstract

An investigation of photoconductivity in epitaxial GaAs:Cr under different illumination levels shows evidence of two levels with optical thresholds at 0.75 and 0.79 eV, and of a broadened trap distribution. Analysis of the spectral dependence of the photoresponse could be carried out, satisfactorily, with our simple model rather than with the Lucovsky model. For the 0.75 eV level we obtained a Huang-Rhys factor of 3, corresponding to a Franck-Condon shift of 0.09 eV and a thermal level at 0.66 eV.

Keywords

Chromium GaAs 

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References

  1. 1.
    Arikan, M.C., Hatch, C.B. and Ridley, B.K. (1980). J. Phys. C: Solid St. Phys., in pressGoogle Scholar
  2. 2.
    Ridley, B.K. (1980). J. Phys. C: Solid St. Phys., in pressGoogle Scholar
  3. 3.
    Amato, M.A. and Ridley, B.K. (1980). J. Phys. C: Solid St. Phys., in pressGoogle Scholar
  4. 4.
    Lucovsky, G. (1965). Solid St. Commun., 3, 299CrossRefGoogle Scholar
  5. 5.
    Rose, A. (1963). Concepts in Photoconductivity and Allied Problems. Chichester; WileyGoogle Scholar

Copyright information

© M.A. Amato, M.C. Arikan and B.K. Ridley 1980

Authors and Affiliations

  • M. A. Amato
    • 1
  • M. C. Arikan
    • 1
  • B. K. Ridley
    • 1
  1. 1.Department of PhysicsUniversity of EssexColchesterUK

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