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Optical and Thermal Properties of Cr in GaAs

  • T. Jesper
  • B. Hamilton
  • A. R. Peaker

Abstract

A variety of characterization techniques has been applied to the GaAs:Cr system and in particular the photoionization cross-sections, electron capture cross-section and thermal emission rates of the dominant chromium-related trap in GaAs have been measured. The temperature dependence of the photoionization thresholds can be accounted for by the temperature variation of the band gap. The hole emission rate is much greater than that for electrons and even in n-type material the DLTS signal is dominated by hole emission.

Keywords

Emission Rate Electron Binding Energy Thermal Activation Energy DLTS Spectrum Hole Emission 
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Copyright information

© T. Jesper, B. Hamilton and A.R. Peaker 1980

Authors and Affiliations

  • T. Jesper
    • 1
  • B. Hamilton
    • 1
  • A. R. Peaker
    • 1
  1. 1.Department of Electrical Engineering and ElectronicsUMISTManchesterUK

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