Abstract
A set of different samples of semi-insulating GaAs:Cr has been assessed independently for their Cr content using EPR measurements, and for their electrically active centres derived from experiments combining Hall, DLTS and optical absorption measurements. In the dark, only Cr2+ centres were observed by EPR whereas Cr3+ signals were always negligible and Cr1+ signals could never be observed. The Cr2+ concentration increases with the residual concentration of shallow donors (ND¯NA) and of a deep donor, probably the ‘pseudo-oxygen’ defect or EL2, thus indicating that compensation occurs by trapping of free electrons on the Cr3+ ions. The residual concentration of EL2 is found to be of the order of 1016 cm-3, in agreement with former evaluations. Furthermore, at 4.2 K the EL2 level lies above the Cr acceptor level.
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References
Krebs, J.J. and Stauss, G.H. (1976). Bull. Amer. Phys. Soc., 21, 89
Kaufmann, U. and Schneider, J. (1976). Solid St. Commun., 20, 143
Stauss, G.H. and Krebs, J.J. (1977). Inst. Phys. Conf. Ser., 33a, 84
Krebs, J.J. and Stauss, G.H. (1977). Phys. Rev. B, 15, 17
Krebs, J.J. and Stauss, G.H. (1977). Phys. Rev. B, 16, 971
Stauss, G.H., Krebs, J.J., Lee, S.H. and Swiggard, E.M. (1979). J. Appl. Phys., 50, 6251
Goltzené, A., Poiblaud, G. and Schwab, C. (1979). J. Appl. Phys., 50, 5425
Goltzené, A., Poiblaud, G. and Schwab, C. (1980). Rev. Phys. Appl., 15, in press
Woods, J.F. and Ainslie, N.G. (1963). J. Appl. Phys., 34, 1469
Swiggard, E.M., Lee, S.H. and von Batchelder, F.W. (1977). Inst. Phys. Conf. Ser., 33b, 23
Martin, G.M., Farges, J.P., Jacob, G., Hallais, J.P. and Poiblaud, G. (1980). To be published in J. Appl. Phys.
von Bardeleben, H.J., Schwab, C. and Goltzené, A. (1975). Phys. Lett., 51A, 460
Kaufmann, U. (1975). Phys. Rev. B, 11, 2478
Troeger, G.L., Rogers, R.N. and Kasper, H.M. (1975). J. Phys. C: Solid St. Phys., 8, L222
Mitonneau, A., Mircea, A., Martin, G.M. and Pons, D. (1979). Rev. Phys. Appl., 14, 853
Huber, A.M., Linh, N.T., Valadon, M., Debrun, J.C., Martin, G.M., Mitonneau, A. and Mircea, A. (1979). J. Appl. Phys., 50, 4022
Martin G.M., Verheijke, M.L., Jansen, J.A.J. and Poiblaud, G. (1979). J. Appl. Phys., 50, 467
Martin, G.M. (1980). This volume
Martin, G.M., Mitonneau, A., Pons, D., Mircea, A. and Woodard, D.W. (1980). To be published in J. Phys. C: Solid St. Phys.
White, A.M. (1979). Solid St. Commun., 32, 205
Picoli, G., Deveaud, B. and Galland, D. (1980). This volume
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© 1980 A. Goltzené, C. Schwab and G.M. Martin
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Goltzene, A., Schwab, C., Martin, G.M. (1980). Correlation Between EPR Assessed Cr2+ and Electrical Compensation in Semi-Insulating GaAs:Cr. In: Rees, G.J. (eds) Semi-Insulating III–V Materials. Birkhäuser Boston. https://doi.org/10.1007/978-1-4684-9193-7_27
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DOI: https://doi.org/10.1007/978-1-4684-9193-7_27
Publisher Name: Birkhäuser Boston
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