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Cr Redistribution in Epitaxial and Implanted GaAs Layers

  • N. T. Linh
  • A. M. Huber
  • P. Etienne
  • G. Morillot
  • P. Duchemin
  • M. Bonnet

Abstract

Quantitative profiles of Cr have been determined by SIMS in cap-annealed, implant-annealed, MBE, VPE and MOCVD samples. The Cr redistribution in VPE and MOCVD layers is well explained by an out-diffusion process. The diffusion coefficients in VPE growth (750ºC) and MOCVD growth (600ºC) are 3 × 10-13 and 7 × 10-15 cm2 s-1, respectively. In cap-annealed, implant-annealed and MBE samples, a surface segregation mechanism is more appropriate to explain experimental results. A Cr background level of 2–3 × 1015 cm-3 is observed in all layers grown on Cr-doped substrates. This level can be reducedif the Cr concentration in the substrate is reduced. MBE layers with Cr content as low as 1–4 × 1014 cm-3 have been grown.

Keywords

Molecular Beam Epitaxy Epitaxial Layer Vapour Phase Epitaxy GaAs Layer MOCVD Growth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© N.T. Linh, A.M. Huber, P. Etienne, G. Morillot, P. Duchemin and M. Bonnet 1980

Authors and Affiliations

  • N. T. Linh
    • 1
  • A. M. Huber
    • 1
  • P. Etienne
    • 1
  • G. Morillot
    • 1
  • P. Duchemin
    • 1
  • M. Bonnet
    • 1
    • 2
  1. 1.Thomson-CSF Central Research LaboratoryOrsayFrance
  2. 2.Thomson-CSF Microwave DivisionFrance

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