Cr Redistribution in Epitaxial and Implanted GaAs Layers

  • N. T. Linh
  • A. M. Huber
  • P. Etienne
  • G. Morillot
  • P. Duchemin
  • M. Bonnet


Quantitative profiles of Cr have been determined by SIMS in cap-annealed, implant-annealed, MBE, VPE and MOCVD samples. The Cr redistribution in VPE and MOCVD layers is well explained by an out-diffusion process. The diffusion coefficients in VPE growth (750ºC) and MOCVD growth (600ºC) are 3 × 10-13 and 7 × 10-15 cm2 s-1, respectively. In cap-annealed, implant-annealed and MBE samples, a surface segregation mechanism is more appropriate to explain experimental results. A Cr background level of 2–3 × 1015 cm-3 is observed in all layers grown on Cr-doped substrates. This level can be reducedif the Cr concentration in the substrate is reduced. MBE layers with Cr content as low as 1–4 × 1014 cm-3 have been grown.


Molecular Beam Epitaxy Epitaxial Layer Vapour Phase Epitaxy GaAs Layer MOCVD Growth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Tuck, B. and Adegboyega, G.A. (1979). J. Phys. D: Appl. Phys., 12, 1895CrossRefGoogle Scholar
  2. 2.
    Tuck, B., Adegboyega, G.A., Jay, P.R. and Cardwell, M.J. (1979). Inst. Phys. Conf. Ser., 45, 114Google Scholar
  3. 3.
    Huber, A.M., Morillot, G., Merenda, P. and Linh, N.T. (1979). Proc. SIMS II, Stanford, p. 91. New York; Springer Verlag.Google Scholar
  4. 3a.
    Huber, A.M., Morillot, G., Linh, N.T., Debrun, J.L. and Valladon, M. (1978). Nuclear Inst. Meth., 149, 543CrossRefGoogle Scholar
  5. 4.
    Huber, A.M., Morillot, G., Linh, N.T., Favennec, P.N., Deveaud, B. and Toulouse, B. (1979). Appl. Phys. Lett., 34, 858CrossRefGoogle Scholar
  6. 5.
    We thank Mr Cajan from Metals Research France for the gift of some undoped samplesGoogle Scholar
  7. 6.
    Favennec, P.N. and L’Haridon, H. (1979). Appl. Phys. Lett., 35, 699CrossRefGoogle Scholar
  8. 7.
    Evans, C.A., Jr, Deline, V.R., Sigmon, T.W. and Lidow, A. (1979). Appl. Phys. Lett., 35, 291CrossRefGoogle Scholar
  9. 8.
    Etienne, P., Massies, J. and Linh, N.T. (1977). J. Phys. E: Scientific Instrum., 10, 1153CrossRefGoogle Scholar
  10. 9.
    Haisty, R.W. and Cronin, G.R. (1964). Proc. 7th Int. Conf. on the Physics of Semiconductors, p. 1161. Paris; DunodGoogle Scholar
  11. 10.
    Kim, H.B., Barett, D.L., Sweeney, G.G. and Heng, T.M.S. (1977). Inst. Phys. Conf. Ser., 33b, 136Google Scholar
  12. 11.
    Slodzian, G. and Hennequin, J.F. (1968). C.R Acad. Sci. Paris, 263B, 1246Google Scholar
  13. 12.
    Delescluse, P., Etienne, P., Huber, A.M. and Linh, N.T. To be published.Google Scholar
  14. 13.
    Duchemin, J.P., Bonnet, M., Koelsch, F. and Huyghe, D. (1978). J. Cryst. Growth, 45, 181CrossRefGoogle Scholar
  15. 13a.
    Duchemin, J.P., Bonnet, M., Koelsch, F. and Huyghe, D. (1979). J. Electrochem. Soc., 126, 1134CrossRefGoogle Scholar
  16. 14.
    Casey, H.C. (1973). Atomic Diffusion in Semiconductors, (Ed. D. Shaw), p. 417. New York; PlenumGoogle Scholar
  17. 15.
    Woodard, D.W. (1979). Thesis, Cornell University, USAGoogle Scholar
  18. 16.
    Otsubo, M. and Miki, H. (1974). Japan J. Appl. Phys., 13, 1655CrossRefGoogle Scholar
  19. 16a.
    Otsubo, M. and Miki, H. (1977). J. Electrochem. Soc., 124, 441CrossRefGoogle Scholar
  20. 17.
    Debney, B.T. and Jay, P.R. To be published in Solid St. Electron. Google Scholar
  21. 18.
    Mitonneau, A., Chane, J.P. and Andre, J.P. (1979). 21st Electronic Materials Conf, Boulder, USAGoogle Scholar
  22. 19.
    Lagues, M. and Domange, J.L. (1975). Surface Sci., 47, 77CrossRefGoogle Scholar
  23. 20.
    Blakely, J.M. and Shelton, J.C. (1975). In Surface Physics of Materials, vol. 2 (Ed. J.M. Blakely). New York; Academic PressGoogle Scholar

Copyright information

© N.T. Linh, A.M. Huber, P. Etienne, G. Morillot, P. Duchemin and M. Bonnet 1980

Authors and Affiliations

  • N. T. Linh
    • 1
  • A. M. Huber
    • 1
  • P. Etienne
    • 1
  • G. Morillot
    • 1
  • P. Duchemin
    • 1
  • M. Bonnet
    • 1
    • 2
  1. 1.Thomson-CSF Central Research LaboratoryOrsayFrance
  2. 2.Thomson-CSF Microwave DivisionFrance

Personalised recommendations