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Charge-Carrier Transport in Semi-Insulating InP Surface Layers

  • L. G. Meiners
  • H. H. Wieder

Abstract

The surface charge-carrier transport and electronic properties of n-type, Fe-doped, < 100> -oriented, Czochralski-grown, semi-insulating InP were investigated by means of field effect controlled galvanomagnetic measurements. It is shown that the surface Fermi level is pinned 0.16 eV below the conduction band, that such surfaces are accumulated, that typical surface electron densities are of the order ns ~ 1011 cm-2 and corresponding mobilities are of the order μ s ~ 5 × 102 cm2 V-1 s-1 and that they are functions of the oxide deposition process. Optimum procedures yield ns ~ 1012 cm-2 and μ s ~ 9 × 102 cm2 V-1 s-1.

Keywords

Gate Voltage Hall Measurement Interface State Density Gate Voltage Dependence Field Effect Mobility 
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Copyright information

© L.G. Meiners and H.H. Wieder 1980

Authors and Affiliations

  • L. G. Meiners
    • 1
  • H. H. Wieder
    • 1
  1. 1.Electronic Material Sciences DivisionNaval Ocean Systems CenterSan DiegoUSA

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