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Semi-Insulating III–V Materials pp 198–205Cite as

Charge-Carrier Transport in Semi-Insulating InP Surface Layers

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Abstract

The surface charge-carrier transport and electronic properties of n-type, Fe-doped, < 100> -oriented, Czochralski-grown, semi-insulating InP were investigated by means of field effect controlled galvanomagnetic measurements. It is shown that the surface Fermi level is pinned 0.16 eV below the conduction band, that such surfaces are accumulated, that typical surface electron densities are of the order ns ~ 1011 cm-2 and corresponding mobilities are of the order μ s ~ 5 × 102 cm2 V-1 s-1 and that they are functions of the oxide deposition process. Optimum procedures yield ns ~ 1012 cm-2 and μ s ~ 9 × 102 cm2 V-1 s-1.

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Author information

Authors and Affiliations

  1. Electronic Material Sciences Division, Naval Ocean Systems Center, San Diego, California, 92152, USA

    L. G. Meiners & H. H. Wieder

Authors
  1. L. G. Meiners
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  2. H. H. Wieder
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Editors and Affiliations

  1. Plessey Research (Caswell) Ltd, UK

    G. J. Rees

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© 1980 L.G. Meiners and H.H. Wieder

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Meiners, L.G., Wieder, H.H. (1980). Charge-Carrier Transport in Semi-Insulating InP Surface Layers. In: Rees, G.J. (eds) Semi-Insulating III–V Materials. Birkhäuser Boston. https://doi.org/10.1007/978-1-4684-9193-7_24

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  • DOI: https://doi.org/10.1007/978-1-4684-9193-7_24

  • Publisher Name: Birkhäuser Boston

  • Print ISBN: 978-1-4684-9195-1

  • Online ISBN: 978-1-4684-9193-7

  • eBook Packages: Springer Book Archive

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