The Cathodoluminescence of Cr-Doped GaAs Prepared by MOCVD Epitaxy

  • D. R. Wight
  • I. D. Blenkinsop
  • S. J. Bass

Abstract

The cathodoluminescence of p-type, n-type and SI epitaxial layers of Cr-doped GaAs has been studied in the temperature range 10–300 K. Four luminescence bands have been detected which are associated with the presence of chromium in the crystals. Correlation with deep level assessments on similar MOCVD material undertaken by other workers in collaboration with this research, has indicated that two of the bands are due to radiative hole capture at defined deep level states. Band A with threshold near 1.2 eV (10 K) is associated with a state which may be the Cr substitutional acceptor occupied by two electrons (Cr1+). The band with threshold near 0.8 eV (10 K) is associated with recombination at the better established, single electron occupied (Cr2+) substitutional acceptor which is considered to be a dominant Cr species, controlling the electrical properties of the crystals. The latter assignment is successfully tested by comparing the temperature dependence of the luminescence and photocapacitance thresholds. A third band, band D, with threshold also near 1.2 eV is associated with the formation of the neutral (Cr3+) state of the same centre by electron capture from the conduction band. The occurrence of two of the luminescence bands is in substantial agreement with results obtained by other workers on similarly counter-doped, ingot materials.

Keywords

Chromium Recombination GaAs Sorting Gallium 

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References

  1. 1.
    Kaufmann, U. and Schneider, J. (1980). Appl. Phys. Lett., in pressGoogle Scholar
  2. 2.
    Stauss, G.H., Krebs, J.J., Lee, S.H. and Swiggard, E.M. (1979). J. Appl. Phys., 50, 6251CrossRefGoogle Scholar
  3. 3.
    Lin, A.L. and Bube, R.E. (1976). J. Appl. Phys., 47, 1859CrossRefGoogle Scholar
  4. 4.
    Look, D.C. (1977). Solid St. Commun., 24, 825CrossRefGoogle Scholar
  5. 5.
    Stocker, J.H. (1977). J. Appl. Phys., 48, 4583CrossRefGoogle Scholar
  6. 6.
    Szawelska, H.R. and Allen, J.W. (1979). J. Phys. C, 12, 3359CrossRefGoogle Scholar
  7. 7.
    Chandler, T., Brunwin, R.F. and Hamilton, B. (1980). This volumeGoogle Scholar
  8. 8.
    Amato, M.A., Arikan, M.C. and Ridley, B.K. (1980). This volumeGoogle Scholar
  9. 9.
    Bass, S.J. (1978). J. Cryst. Growth, 44, 29CrossRefGoogle Scholar
  10. 10.
    Griffiths, R.G., Blenkinsop, I.D. and Wight, D.R. (1979). Elect. Lett., 15, 629CrossRefGoogle Scholar
  11. 11.
    Lightowlers, E.C. and Penchina, C.M. (1978). J. Phys. C, 11, L405CrossRefGoogle Scholar
  12. 12.
    Instone, T. and Eaves, L. (1978). J. Phys. C, 11, L771CrossRefGoogle Scholar
  13. 13.
    Brozel, M.R., Butler, J., Newman, R.C., Ritson, A., Stirland, D.J. and Whitehead, C. (1978). J. Phys. C, 11, 1857CrossRefGoogle Scholar

Copyright information

© Controller, HMSO, London 1980

Authors and Affiliations

  • D. R. Wight
    • 1
  • I. D. Blenkinsop
    • 1
  • S. J. Bass
    • 1
  1. 1.RSREBaldock, HertfordshireUK

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