Photoluminescence and Photoconductivity Study of the 1.10 eV Energy Level in Fe-Doped InP
Photoluminescence and photoconductivity measurements in Fe-doped high-resistivity InP have been performed in the temperature range 4–300 K. Particular emphasis was placed on the explanation of the 1.06 eV emission. The emission spectrum has phonon structure at lower temperatures. The observed band shape and peak position are well explained by the configuration co-ordinate model. A nearest neighbour molecular-like centre (Fe)In— (V)p is responsible for the 1.06 eV emission as well as the ~ 1.10 eV emission present in doped and undoped InP. Both d.c. and a.c. photoconductivity spectra show a strong photoconductivity onset at 1.1–1.2 eV for T=7–300 K. This onset can be ascribed to the defect centre (Fe)In-(V)p which has a carrier trapping level of 0.24 eV.
KeywordsPhonon Energy Defect Centre Zero Phonon Line Photoconductivity Spectrum Intracentre Transition
Unable to display preview. Download preview PDF.