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Photoconductivity, Photoluminescence and Zeeman Spectroscopy of Cr in GaAs, GaP and InP

  • L. Eaves
  • T. Englert
  • T. Instone
  • C. Uihlein
  • P. J. Williams
  • H. C. Wright

Abstract

We report high resolution Zeeman spectroscopy up to 10 T of Cr-associated photoluminescence in GaAs and GaP including the anisotropy of the splitting with B swept in the (011) plane. The results are interpreted in terms of recombination at an ‘isoelectronic molecular’ complex involving Cr and a near-neighbour donor. In GaAs the complex has < 111> axial symmetry. The anisotropy for GaP is markedly different and corresponds to a defect or complex with principal axes along the <100> directions. The photoconductivity spectra arising from Cr in GaAs, InP and GaP have also been studied. Attention is drawn to the close correspondence between the energies of the zero phonon photo luminescence lines and the thresholds of the Cr-associated photoconductivity peaks in all three systems. The photoconductivity spectra are compared with the results of a new theory for optical cross-sections.

Keywords

Photo Luminescence Conduction Band Edge Conduction Band Minimum Zero Phonon Line Photoconductivity Spectrum 
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Copyright information

© L. Eaves, T. Englert, T. Instone, C. Uihlein, P.J. Williams and H.C. Wright 1980

Authors and Affiliations

  • L. Eaves
    • 1
  • T. Englert
    • 1
    • 2
  • T. Instone
    • 1
    • 3
  • C. Uihlein
    • 1
    • 2
  • P. J. Williams
    • 1
  • H. C. Wright
    • 1
    • 3
  1. 1.Department of Physics, University ParkUniversity of NottinghamNottinghamUK
  2. 2.Max-Planck Institut Für FestkörperforschungGrenobleFrance
  3. 3.Plessey Research (Caswell) LtdTowcesterUK

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