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Influence of Chromium Redistribution on the Electrical Properties of Se and Zn Implanted Cr-Doped Substrates

  • P. N. Favennec
  • H. L’Haridon

Abstract

On implanting impurities to give shallow donor or acceptor states in Cr-doped substrates the apparent electrical activity following annealing may be above, below or close to 100%. By supposing that chromium and some other metallic impurity, which acts as an acceptor, redistribute during annealing, the electrical measurements on the implanted SI GaAs substrates can be understood.

Keywords

Shallow Donor Type Layer Metallic Impurity Electron Density Profile Shallow Acceptor 
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References

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Copyright information

© P.N. Favennec and H. l’Haridon 1980

Authors and Affiliations

  • P. N. Favennec
    • 1
  • H. L’Haridon
    • 1
  1. 1.Centre National d’Etudes des TélécommunicationsLannion CedexFrance

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