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Hydrogen Ion Bombardment of GaAs for Device Isolation

  • I. J. Saunders
  • K. Steeples

Abstract

Multiple energy bombardments of n+ GaAs with the three hydrogen isotopes have shown that deuterons offer great advantages for device isolation. Carrier removal is accomplished at a deuteron dose only 5% of that needed with protons, significantly reducing processing time. Higher doses may be needed for thermal stability, but in all cases deuteron bombardment has been found to be more stable for a given dose. A model for the carrier removal is described.

Keywords

Electron Trap Hydrogen Isotope Isochronal Annealing Annealing Behaviour Lattice Parameter Measurement 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© I.J. Saunders and K. Steeples 1980

Authors and Affiliations

  • I. J. Saunders
    • 1
  • K. Steeples
    • 1
  1. 1.Department of PhysicsUniversity of LancasterLancasterUK

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