Hydrogen Ion Bombardment of GaAs for Device Isolation

  • I. J. Saunders
  • K. Steeples


Multiple energy bombardments of n+ GaAs with the three hydrogen isotopes have shown that deuterons offer great advantages for device isolation. Carrier removal is accomplished at a deuteron dose only 5% of that needed with protons, significantly reducing processing time. Higher doses may be needed for thermal stability, but in all cases deuteron bombardment has been found to be more stable for a given dose. A model for the carrier removal is described.


Electron Trap Hydrogen Isotope Isochronal Annealing Annealing Behaviour Lattice Parameter Measurement 
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Copyright information

© I.J. Saunders and K. Steeples 1980

Authors and Affiliations

  • I. J. Saunders
    • 1
  • K. Steeples
    • 1
  1. 1.Department of PhysicsUniversity of LancasterLancasterUK

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