Hydrogen Ion Bombardment of GaAs for Device Isolation
Multiple energy bombardments of n+ GaAs with the three hydrogen isotopes have shown that deuterons offer great advantages for device isolation. Carrier removal is accomplished at a deuteron dose only 5% of that needed with protons, significantly reducing processing time. Higher doses may be needed for thermal stability, but in all cases deuteron bombardment has been found to be more stable for a given dose. A model for the carrier removal is described.
KeywordsElectron Trap Hydrogen Isotope Isochronal Annealing Annealing Behaviour Lattice Parameter Measurement
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- 1.Murphy, R.A., Bozler, C.O., Donnelly, J.P., Laton, R.W., Lincoln, G.A., Sudbury, R.W., Lindley, W.T., Lowe, L.F. and Deane, M. I., (1977).Inst. Phys. Conf. Ser., 33b, 210Google Scholar
- 3.Steeples, K. and Saunders, I. J. (1980). Submitted to Radiation Effects Google Scholar
- 4.Newman, R.C. (1979). Private communicationGoogle Scholar
- 5.Dean, P.J. and Choyke, W.J. (1977). Adv. Phys., 26, 1. (This review provides a bibliography for the discussion above)Google Scholar
- 6.Dietrich, H.B. (1976). Report of NRL Progress, 1, 3Google Scholar
- 7.Steeples, K., Dearnaley, G. and Stoneham, A. M. (1980). Appl. Phys. Lett., in pressGoogle Scholar