A Model for Thermal Conversion of Semi-Insulating GaAs
A model for thermal conversion of Cr-doped semi-insulating GaAs is proposed. Residual donors (Nd - Na) and out-diffusion of originally compensating Cr acceptors are mainly responsible for thermal conversion. The model explained well the experimental carrier concentration profiles in the layers that were thermally converted to n-type under a wide range of annealing conditions, with modification by thermally induced acceptors and donors.
The specification of Cr-doped semi-insulating GaAs for fabricating a MESFET by direct ion implantation was determined, based on the model, from the standpoint of thermal conversion and doping efficiency. The specification is (residual Nd - Na)/(initial Cr concentration)≤ 0.25, and (initial Cr concentration)≤5× 1016 cm-3.
KeywordsDiffusion Constant Thermal Conversion Dose Implantation Residual Donor Doping Efficiency
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