Redistribution and Vaporization of Cr Impurities in Semi-Insulating GaAs

  • T. Udagawa
  • M. Higashiura
  • T. Nakanisi


Cr impurity redistribution and its origin in Cr-doped semi-insulating GaAs substrates annealed without encapsulation have been investigated using secondary ion mass spectrometry and flameless atomic absorption spectrometry. It is concluded that, as a result of the Cr vaporization from the substrate surface, Cr diffuses rapidly towards the surface at 800° C and above. Also, the influence of surface thermal dissociation on the Cr diffusion is discussed.


Thermal Dissociation Flameless Atomic Absorption Flameless Atomic Absorption Spectrometry Graphite Atomizer Arsenic Overpressure 
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Copyright information

© T. Udagawa, M. Higashiura and T. Nakanisi 1980

Authors and Affiliations

  • T. Udagawa
    • 1
  • M. Higashiura
    • 1
  • T. Nakanisi
    • 1
  1. 1.Electronics Equipment DivisionToshiba CorporationSaiwai-ku, Kawasaki 210Japan

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