Heat Treatment Behaviour of Cr Implanted in GaAs SI Material
Cr has been implanted at different doses in GaAs (1013–105 at. cm-2, 190 keV). Following implantation, the samples were annealed in two ways: with a silicon nitride cap or face to face in hydrogen flow. SIMS has been used to study the Cr distributions. Redistribution of chromium atoms occurs during heat treatment for the two types of annealing. In the case of the silicon nitride capped samples, the Cr migration involves two processes with very different rates. The faster one, which is observed as soon as the silicon nitride has been deposited, corresponds to a chromium motion towards the surface. The presence of a deeper structure for both types of heat treatment shows how important is the influence of the defects on the Cr diffusion mechanism. In the case of face to face annealing, the tail of the Cr distribution demonstrates that in-dif fusion takes place.
KeywordsSilicon Nitride Chromium Atom Silicon Nitride Film Implantation Damage Spark Source Mass Spectrometry
Unable to display preview. Download preview PDF.
- 2.Werner, H.W. (1976). Acta Electronica, 19, 53Google Scholar
- 3..Simondet, F., Venger, C., Martin, G.M. and Chaumont, J. Submitted to Appi Phys. Lett. Google Scholar
- 5..Theeten, J.B. Private communicationGoogle Scholar
- 6.Martin, G.M., Steers, M., Venger, C., Simondet, F. and Rigo, S. (1979). Laser and Electron Beam Processing of Materials, November, Cambridge, Mass.Google Scholar
- 7.Casey, H.C. (1973). Atomic Diffusion in Semiconductors (Ed. D. Show) p. 417. New York; Plenum PressGoogle Scholar
- 10.Tuck, B., Adegboyega, G.A., Jay, P.R. and Cardwell, M.S. (1979). Inst. Phys. Conf. Ser., 45, 114Google Scholar