Abstract
Cr has been implanted at different doses in GaAs (1013–105 at. cm-2, 190 keV). Following implantation, the samples were annealed in two ways: with a silicon nitride cap or face to face in hydrogen flow. SIMS has been used to study the Cr distributions. Redistribution of chromium atoms occurs during heat treatment for the two types of annealing. In the case of the silicon nitride capped samples, the Cr migration involves two processes with very different rates. The faster one, which is observed as soon as the silicon nitride has been deposited, corresponds to a chromium motion towards the surface. The presence of a deeper structure for both types of heat treatment shows how important is the influence of the defects on the Cr diffusion mechanism. In the case of face to face annealing, the tail of the Cr distribution demonstrates that in-dif fusion takes place.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Martin, G.M., Verheijke, M.L., Jansen, J.A.J. and Poiblaud, G. (1979). J. Appl. Phys., 50, 467
Werner, H.W. (1976). Acta Electronica, 19, 53
Simondet, F., Venger, C., Martin, G.M. and Chaumont, J. Submitted to Appi Phys. Lett.
Deveaud, B. and Favennec, P.N. (1977). Solid St. Commun., 24, 473
Theeten, J.B. Private communication
Martin, G.M., Steers, M., Venger, C., Simondet, F. and Rigo, S. (1979). Laser and Electron Beam Processing of Materials, November, Cambridge, Mass.
Casey, H.C. (1973). Atomic Diffusion in Semiconductors (Ed. D. Show) p. 417. New York; Plenum Press
Evans, C.A. Jr, Deline, V.R., Sigmon, T.W. and Lidow, A. (1979). Appl. Phys. Lett., 35, 291
Huber, A.M., Morillot, G., Linh, N.T., Favennec, P.M., Deveaud, B. and Toulouse, B. (1979). Appl. Phys. Lett., 34, 858
Tuck, B., Adegboyega, G.A., Jay, P.R. and Cardwell, M.S. (1979). Inst. Phys. Conf. Ser., 45, 114
Tuck, B. and Adegboyega, G.A. (1979). J. Phys. D., 12, 7090
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1980 F. Simondet, C. Venger, G.M. Martin and J. Chaumont
About this chapter
Cite this chapter
Simondet, F., Venger, C., Martin, G.M., Chaumont, J. (1980). Heat Treatment Behaviour of Cr Implanted in GaAs SI Material. In: Rees, G.J. (eds) Semi-Insulating III–V Materials. Birkhäuser Boston. https://doi.org/10.1007/978-1-4684-9193-7_10
Download citation
DOI: https://doi.org/10.1007/978-1-4684-9193-7_10
Publisher Name: Birkhäuser Boston
Print ISBN: 978-1-4684-9195-1
Online ISBN: 978-1-4684-9193-7
eBook Packages: Springer Book Archive