MOCVD Growth of Narrow GAP Low Dimensional Structures

  • M. Razeghi
Part of the NATO ASI Series book series (NSSB, volume 163)


Very thin epitaxial layers of III–V semiconductor compounds of accurately controlled thickness and composition can be prepared by low pressure metal organic chemical vapor deposition growth technique. The interfaces between these layers significantly Influence their electronic and optical properties and, ultimately, device performance.


Rayleigh Number Epitaxial Layer Tertiary Amine Metal Organic Chemical Vapor Deposition Colorless Liquid 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    M. Razeghi, J.P. Duchemin and J.C. Portal, Appl. Phys. Letters, 46:46 (1985).ADSCrossRefGoogle Scholar
  2. 2.
    M. Razeghi, P. Maurel, A. Tardella, L. Donomski, D. Gauthier, J.C. Portal, J. Appl. Phys. (schedule for September 1986).Google Scholar
  3. 3.
    M. Razeghi, J. P. Hirtz, U.O. Ziemelis, C. Delalande, B. Etienne and M. Voos, Appl. Phys. Letters, 43:585 (1983).ADSCrossRefGoogle Scholar
  4. 4.
    M. Razeghi, P. Maurel, F. Omnes, L. Donomski, J.C. Portal, Appl. Phys. Letters, 48:1267 (1986).ADSCrossRefGoogle Scholar
  5. 5.
    M. Razeghi, P. Maurel, F. Omnes, E. Thörngren, NATO Workshop on low-dimensional structure. St-Andrew, U.K. 29 July-2 August (1986).Google Scholar
  6. 6.
    M.J. Ludowise, J. Appl. Phys., 58:R31 (1985).ADSCrossRefGoogle Scholar
  7. 7.
    J.P. Duchemin, M. Bonnet, F. Koelsch, and D. Huighe, J. Electrochem. Soc., 126:1134 (1979).CrossRefGoogle Scholar
  8. 8.
    M. Razeghi, Chapter 12 of “Technology for chemicals and materials for electronics”, ed. Howells, London (1984).Google Scholar
  9. 9..
    Alphagaz, TEXAS ALKYLS Production.Google Scholar
  10. 10.
    H.M. Manasevit and W.I. Simpson, J. Electrochem., 118:C291 (1971).Google Scholar
  11. 11.
    S.J. Bass and P. Oliver, Inst. Phys. Conf. Ser. 33b:1 (1977).Google Scholar
  12. 12.
    D.J. Tritton, “Physical Fluid Dynamics”, Van Nostrand Eeinhold (UK) Co.Ltd (1982), University Press, Cambridge.Google Scholar
  13. 13.
    L. Prandtl and O.C. Tietgens, “Applied Hydro-and Aeromechanics”, Mc-Grew-Hill/Doner (1934).Google Scholar
  14. 14.
    A.H. Shapiro, Shape and Flow (Heinemann) (1961).Google Scholar
  15. 15.
    M. Razeghi and J.P. Buchemin, J. Cryst. Growth, 64:76 (1983).ADSCrossRefGoogle Scholar
  16. 15a.
    M.A. Poisson, C. Brylinski, and J.P. Duchemin, Appl. Phys. Lett., 46:478 (1985).CrossRefGoogle Scholar
  17. 16.
    M. Razeghi, “semiconductors and semimetals”, vol. 22, ed. W.T. Tsang (1985).Google Scholar
  18. 17.
    S.M. Sze, “Physics of semiconductor devices”, John Wiley & Sons (1981).Google Scholar
  19. 18.
    Ridely, Appl. Phys. 48:754 (1977).CrossRefGoogle Scholar
  20. 19.
    M.A. Poisson, C. Brylinski, G. Coloner, D. Osselin, S. Hersee, F. Azon, D. Lechevallier, J. Lacombe, J. Electron Lett., 20:n°25/26, 1061 (1984).ADSCrossRefGoogle Scholar
  21. 20.
    M. lazeghi and J.P. Duchemin, J. Vac. Sci. Tech. B, Vol. 1, n°2 (1983).Google Scholar
  22. 21.
    C.A. Burrus, A.G. Dental and T.P. Lee, Opt. Commun, 38:124 (1981).ADSCrossRefGoogle Scholar
  23. 22.
    P. Poulain, M. Razeghi, K. Kazmierski, R. Blondeau, P. Philippe, Electronics Letters, Vol. 21, n°10, 441 (1985).CrossRefGoogle Scholar
  24. 23.
    K. Kazmierski, A. Huber, G. Morillot and B. Decremonx, Upn, J. Appl. Phys., 23:628 (1984).ADSCrossRefGoogle Scholar
  25. 24.
    R.A. Huler, M. Razeghi, G. Morillot, GaAs and related compounds, FRANCE, 26–28 September (1984), Inst. Phys. Conf. Ser. N°74, 41.Google Scholar
  26. 25..
    M. Razeghi, J. Nagle, P. Maurel, F. Omnes and J.P. Pocholle, Appl. Phys. Letters (to be published).Google Scholar
  27. 26..
    M. Razeghi, A. Tardella, R.A. Danies, A.P. Long, M.J. Kelly, E. Britton, C. Boothroyd and W.M. Stehbs, Electronic Letters (to be published).Google Scholar
  28. 27..
    J.Y. Raulin, E. Thorngren, M.A. Poisson, M. Razeghi, G. Colomer, Appl. Phys. Letters (to be published).Google Scholar
  29. 28..
    M.J. Kelly, C.B. Boothroyd and W.M. Stobhs (private communication). These results will be published.Google Scholar
  30. 29.
    M. Razeghi, J. Ramdanis, D. Vessiele, M. Decoster, M. Constant and J. Vanbremeersch, Appl. Phys. Lett., 49:215 (1986).ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1987

Authors and Affiliations

  • M. Razeghi
    • 1
  1. 1.Thomson-CSF-LCROrsayFrance

Personalised recommendations