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MOCVD Growth of Narrow GAP Low Dimensional Structures

  • M. Razeghi
Part of the NATO ASI Series book series (NSSB, volume 163)

Abstract

Very thin epitaxial layers of III–V semiconductor compounds of accurately controlled thickness and composition can be prepared by low pressure metal organic chemical vapor deposition growth technique. The interfaces between these layers significantly Influence their electronic and optical properties and, ultimately, device performance.

Keywords

Rayleigh Number Epitaxial Layer Tertiary Amine Metal Organic Chemical Vapor Deposition Colorless Liquid 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1987

Authors and Affiliations

  • M. Razeghi
    • 1
  1. 1.Thomson-CSF-LCROrsayFrance

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