Superlattices and Superstructures Grown by MOCVD
MOCVD technollogy has, in recent several years, been remarkably advanced to meet wide range of requirement of the most active forefront of III–V compound semiconductor technology. It has recently been successfully used in growing various kinds of abrupt structures such as superlattices, quantum wells, modulation doped structures and HBT’s and so on. Abrupt structures have also been grown with materials other than GaAs/AlGaAs. There are fundamental differences in the growth temperature dependence of the structure of the quantum wells between MOCVD and MBE, which reflect the difference in the growth mechanisms between the two methods. In addition to the sophisticated structures, an abrupt structure device such as HIFET (hetero-interface FET: so-called HEMT) has been produced as a practical commercial product.
KeywordsGrowth Temperature High Electron Mobility Metalorganic Chemical Vapor Deposition Hill Formation Sheet Carrier Concentration
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