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Molecular Beam Epitaxial Growth Kinetics, Mechanism(s) and Interface Formation: Computer Simulations and Experiments

  • Anupam Madhukar
Part of the NATO ASI Series book series (NSSB, volume 163)

Abstract

When, during the early phase of organizing this research workshop, Dr. Robin Farrow approached me, not only was I supportive of the idea and its timeliness in bringing together a disparate community of researchers in the area of thin film epitaxial growth, but also was pleased to have the opportunity to present some of the work undertaken at University of Southern California in the area of molecular beam epitaxial (MBE) growth of III–V compound semiconductors. Judging by the level of interest and discussions, often quite spirited, that occurred during the workshop, it is quite clear that the organizers succeeded in their objective quite well. In writing this article I am therefore mindful of capturing some of the spirit, excitement, and controversies, real or imagined.

Keywords

Growth Front Reflection High Energy Electron Diffraction Growth Interruption Smoothness Parameter Molecular Beam Epitaxial 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1987

Authors and Affiliations

  • Anupam Madhukar
    • 1
  1. 1.Departments of Materials Science and PhysicsUniversity of Southern CaliforniaLos AngelesCaliforniaUSA

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