Abstract
The RHEED intensity oscillation technique has received widespread attention in the study of MBE growth and is, in principle, capable of providing detailed information on growth dynamics. There are, however, some rather serious complications associated with diffraction behaviour which must be resolved before its full potential can be realised.
We first describe our present understanding of diffraction effects and then demonstrate the application of the technique to the assessment of surface migration during growth. This is extended to the evaluation of the morphological and compositional structure of heterojunctions. Finally, we present photoluminescence and photoluminescence excitation spectroscopy measurements designed to probe the interface structure of quantum wells and indicate the extent to which these results can be correlated with RHEED data. We derive interface models which are apparently consistent with the information obtained from both approaches.
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Joyce, B.A. et al. (1987). Dynamic RHEED Techniques and Interface Quality in MBE-Grown GaAs/(Al,Ga)As Structures. In: Farrow, R.F.C., Parkin, S.S.P., Dobson, P.J., Neave, J.H., Arrott, A.S. (eds) Thin Film Growth Techniques for Low-Dimensional Structures. NATO ASI Series, vol 163. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-9145-6_3
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DOI: https://doi.org/10.1007/978-1-4684-9145-6_3
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