The TEM Characterisation of Low-Dimensional Structures in Epitaxial Semiconductor Thin Films

  • J. P. Gowers
Part of the NATO ASI Series book series (NSSB, volume 163)


Many types of low-dimensional structures can now be grown in epitaxial semiconductor thin films using growth techniques such as molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD)1,2. Recent advances in the understanding of the fundamental growth processes and in the control technology, now enable layer thickness, composition and interface abruptness to be controlled at an atomic level of precision3–6.


Molecular Beam Epitaxy Dark Field Image Alloy Layer Multiple Quantum Well Molecular Beam Epitaxy Growth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer Science+Business Media New York 1987

Authors and Affiliations

  • J. P. Gowers
    • 1
  1. 1.Philips Research LaboratoriesRedhill, SurreyUK

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