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Thin Film Growth Techniques for Low-Dimensional Structures pp 471–486Cite as

The TEM Characterisation of Low-Dimensional Structures in Epitaxial Semiconductor Thin Films

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Part of the book series: NATO ASI Series ((NSSB,volume 163))

Abstract

Many types of low-dimensional structures can now be grown in epitaxial semiconductor thin films using growth techniques such as molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD)1,2. Recent advances in the understanding of the fundamental growth processes and in the control technology, now enable layer thickness, composition and interface abruptness to be controlled at an atomic level of precision3–6.

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Author information

Authors and Affiliations

  1. Philips Research Laboratories, Cross Oak Lane, Redhill, Surrey, UK

    J. P. Gowers

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  1. J. P. Gowers
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Editor information

Editors and Affiliations

  1. IBM Almaden Research Center, San Jose, California, USA

    R. F. C. Farrow  & S. S. P. Parkin  & 

  2. Philips Research Laboratories, Surrey, UK

    P. J. Dobson  & J. H. Neave  & 

  3. Simon Fraser University, Burnaby, Canada

    A. S. Arrott

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© 1987 Springer Science+Business Media New York

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Gowers, J.P. (1987). The TEM Characterisation of Low-Dimensional Structures in Epitaxial Semiconductor Thin Films. In: Farrow, R.F.C., Parkin, S.S.P., Dobson, P.J., Neave, J.H., Arrott, A.S. (eds) Thin Film Growth Techniques for Low-Dimensional Structures. NATO ASI Series, vol 163. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-9145-6_26

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  • DOI: https://doi.org/10.1007/978-1-4684-9145-6_26

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-9147-0

  • Online ISBN: 978-1-4684-9145-6

  • eBook Packages: Springer Book Archive

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