High Resolution Electron Microscopy and Convergent Beam Electron Diffraction of Semiconductor Quantum Well Structures

  • Colin J. Humphreys
Part of the NATO ASI Series book series (NSSB, volume 163)


For the structural characterisation of Low-Dimensional Structures the parameters we need to know include the following,: (i) the precise thickness of each layer, (ii) the presence of interface steps, (iii) the positions of atoms in the layers and at the interfaces, (iv) whether or not crystallographic defects such as dislocations and planar faults are present, (v) the local chemical composition on a nanometre scale, (vi) the electron configuration of the atoms (particularly the d-band occupancy of transition metals in magnetic superlattices) and (vii) local strains with nanometre scale spatial resolution. In addition it would be very useful to have a ‘strain map’ superimposed on the image.


Scanning Transmission Electron Microscope Electron Energy Loss Spectroscopy Multiple Quantum Well High Resolution Electron Microscopy Convergent Beam Electron Diffraction 


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Copyright information

© Springer Science+Business Media New York 1987

Authors and Affiliations

  • Colin J. Humphreys
    • 1
  1. 1.Department of Materials Science and EngineeringUniversity of LiverpoolLiverpoolEngland, UK

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