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Effect of Barrier Configuration and Interface Quality on Structural and Electronic Properties of MBE-Grown AlxGa1-xAs/GaAs, AlxGa1-xSb/GaSb and AlxIn1-xAs/GaxIn1-xAs Superlattices

  • K. Ploog
  • W. Stolz
  • L. Tapfer
Part of the NATO ASI Series book series (NSSB, volume 163)

Abstract

The challenge for the design and growth of quantum wells and superlattices made of III–V semiconductors is to minimize scattering from impurities, alloy clusters or interface irregularities so that the confined carriers can move freely along the interfaces. We present a few examples for the influence of interface quality and barrier configuration on the structural as well as electrical and optical properties of III–V semiconductor quantum wells and superlattices grown by molecular beam epitaxy (MBE).

Keywords

Molecular Beam Epitaxy Epitaxial Layer Barrier Thickness Growth Interruption Strained Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1987

Authors and Affiliations

  • K. Ploog
    • 1
  • W. Stolz
    • 1
  • L. Tapfer
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart-80FR-Germany

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