Effect of Barrier Configuration and Interface Quality on Structural and Electronic Properties of MBE-Grown AlxGa1-xAs/GaAs, AlxGa1-xSb/GaSb and AlxIn1-xAs/GaxIn1-xAs Superlattices
The challenge for the design and growth of quantum wells and superlattices made of III–V semiconductors is to minimize scattering from impurities, alloy clusters or interface irregularities so that the confined carriers can move freely along the interfaces. We present a few examples for the influence of interface quality and barrier configuration on the structural as well as electrical and optical properties of III–V semiconductor quantum wells and superlattices grown by molecular beam epitaxy (MBE).
KeywordsMolecular Beam Epitaxy Epitaxial Layer Barrier Thickness Growth Interruption Strained Layer
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