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Growth and Characterization of Magnetic Transition Metal Overlayers on GaAs Substrates

  • G. A. Prinz
Part of the NATO ASI Series book series (NSSB, volume 163)

Abstract

Metallization of semiconductors is an important aspect of thin film electronics. Epitaxial metal films, i.e. single-crystal metal films in crystallographic registry with the semiconductor substrate, are the ultimate refinement of metallization and offer significant opportunities for new and improved devices. Epitaxial A1 films on GaAs were an early example, offering much lower noise in Schottky barrier diode applications than previous metallization techniques.1 Magnetic metal films grown epitaxially on semiconductors open additional avenues for fundamental research as well as new electronic device development, by combining the properties of both magnetic materials and semiconductors in one hybrid structure.

Keywords

Core Level Film Plane Reflection High Energy Electron Diffraction Core Level Spectrum Reflection High Energy Electron Diffraction Pattern 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1987

Authors and Affiliations

  • G. A. Prinz
    • 1
  1. 1.Naval Research LaboratoryUSA

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