Growth and Characterization of Magnetic Transition Metal Overlayers on GaAs Substrates
Metallization of semiconductors is an important aspect of thin film electronics. Epitaxial metal films, i.e. single-crystal metal films in crystallographic registry with the semiconductor substrate, are the ultimate refinement of metallization and offer significant opportunities for new and improved devices. Epitaxial A1 films on GaAs were an early example, offering much lower noise in Schottky barrier diode applications than previous metallization techniques.1 Magnetic metal films grown epitaxially on semiconductors open additional avenues for fundamental research as well as new electronic device development, by combining the properties of both magnetic materials and semiconductors in one hybrid structure.
KeywordsCore Level Film Plane Reflection High Energy Electron Diffraction Core Level Spectrum Reflection High Energy Electron Diffraction Pattern
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