RHEED Intensity Oscillations and the Epitaxial Growth of Quasi-2d Magnetic Semiconductors
Reflection high energy electron diffraction (RHEED) intensity oscillations have been observed in the II-VI compound ZnSe and in the magnetic semiconductor MnSe. These RHEED intensity oscillations provided monolayer resolution in the growth of superlattice structures designed to explore the effects of reduced dimensionality on the magnetic ordering of MnSe. Using molecular beam epitaxy, the heretofore hypothetical zincblende MnSe has been grown. Although “thick” layers of MnSe are antiferromagnetic, thin layers of one, three, and four monolayers were found to exhibit paramagnetic behavior. The growth, use of the RHEED intensity oscillations, and magneto-optical characterization of these unique, highly lattice-mismatched structures is discussed. In addition nucleation characteristics, obtained via RHEED intensity oscillations, are described at a II-VI compound/HI-V compound interface for the ZnSe/GaAs heterojunction.
KeywordsMagnetic Semiconductor Reflection High Energy Electron Diffraction Intensity Oscillation Superlattice Structure Reflection High Energy Electron Diffraction Pattern
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