Reflection High-Energy Electron Diffraction Intensity Oscillation — An Effective Tool of Si and GexSi1-x Molecular Beam Epitaxy
Molecular beam epitaxy (MBE) is becoming an important technique for growing epitaxial Si based films. The first advantage of Si MBE is a low growth temperature, usually in the range of 400 to 800°C, which is much lower than that required for conventional techniques. The lower growth temperature reduces diffusion of dopants. The second advantage is an excellent control of doping distribution which is essential for high speed VLSI. The third advantage is an ability to fabricate heterojunction and superlattice structures. Examples are GexSi1-x strained-layer super-lattices1–5, metal suicides6,7, Si on insulators8,9 and Si hetero-junctions with III–V compound semiconductors10,11. Among them, hetero-epitaxy of GexSi1-x/Si attracts much attention because it can add to conventional Si integrated circuits exciting possibilities of hetero-junction devices. Modulation-doped GexSi1-x/Si strained-layer hetero-structures showed two-dimensional carrier gas properties and enhanced mobilities for electron2 and hole3. Recently, n-channel4 and p-channel5 modulation-doped field effect transistors were successfully fabricated.
KeywordsMolecular Beam Epitaxy Molecular Beam Epitaxy Growth Intensity Oscillation RHEED Pattern Critical Layer Thickness
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