Atomic Layer Epitaxy of Compound Semiconductors

  • Markus Pessa
Part of the NATO ASI Series book series (NSSB, volume 163)


Atomic layer epitxy (ALE) is a relatively new method of making low-dimensional overlayer structures of semiconductor and insulator compounds1. ALE makes use of the difference between chemical and physical adsorption of molecular species brought onto the substrate surface as alternate molecular beam or vapor pulses. The growth proceeds stepwise in a layer-by-layer fashion resulting in “digital epitaxy” where film thickness is precisely controlled. It also provides advantages for coating several large-area substrates simultaneously in an industrial environment2.


Physical Adsorption Operational Cycle Sticking Coefficient Growth Proceeds Thin Film Growth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    C.H.L Goodman and M. Pessa, J. Appl. Phys. 60, R65 (1986)ADSCrossRefGoogle Scholar
  2. 2.
    T. Suntola and J. Hyvārinen, Ann. Rev. Mater. Sci. 15, 177 (1985)ADSCrossRefGoogle Scholar
  3. 3.
    M. Pessa, O. Jylhā and M. A. Herman, J. Crystal Growth 67, 255 (1984)ADSCrossRefGoogle Scholar
  4. 4.
    M. A. Herman, M. Vulli and M. Pessa, J. Crystal Growth 73, 403 (1985)ADSCrossRefGoogle Scholar
  5. 5a.
    M. A. Herman, O. Jylhā and M. Pessa, Cryst. Res. Technol. 21, 841 (1986)CrossRefGoogle Scholar
  6. 5b.
    M. A. Herman, O. Jylhā and M. Pessa, Cryst. Res. Technol. 21, 969 (1986)CrossRefGoogle Scholar
  7. 6.
    T. Pakkanen, M. Lindblad and V. Nevalainen, in The Extended Abstracts of The First Symposium on Atomic Layer Epitaxy, Espoo, Finland, 1984, p. 14Google Scholar
  8. 7.
    M. A. Herman, O. Jylhā and M. Pessa, J. Crystal Growth 66, 480 (1984)ADSCrossRefGoogle Scholar
  9. 8.
    M. Pessa and O. Jylh, Appl. Phys. Lett. 45, 646 (1984)ADSCrossRefGoogle Scholar
  10. 9.
    T. Yao and T. Takeda, Appl. Phys. Lett. 48, 160 (1986)ADSCrossRefGoogle Scholar
  11. 10.
    T. Yao, T. Takeda and R. Watanuki, App.l Phys. Lett. 48, 1615 (1986)ADSCrossRefGoogle Scholar
  12. 11.
    M. Pessa, in Abstracts of The MRS 1986 Fall Meeting, Boston, USA, p. 632Google Scholar
  13. 12a.
    J. Nishizawa, H. Abe and T. Kurabayashi, J. Electrochem. Soc, 132, 1197 (1985);ADSCrossRefGoogle Scholar
  14. 12b.
    J. Nishizawa, H. Abe, T. Kurabayashi and N. Sakuri, J. Vac. Sci. Technol. A4, 706 (1986);ADSGoogle Scholar
  15. 12c.
    J. Nishizawa and T. Kurabayashi, J. Cryst. Soc. Japan 28, 133 (1986)CrossRefGoogle Scholar
  16. 13.
    S.M. Bedair, M.A. Tischler, T. Katsuyama and N.A. El-Masry, Appl. Phys. Lett. 47, 51 (1985)ADSCrossRefGoogle Scholar
  17. 14.
    M.A. Tischler and S.M. Bedair, Appl. Phys. Lett 48, 1681 (1986)ADSCrossRefGoogle Scholar
  18. 15.
    A. Doi, Y. Aoyagi and S. Namba, Appl. Phys. Lett. 48, 1787 (1986)ADSCrossRefGoogle Scholar
  19. 16.
    A. Usui and S. Sunakawa, Jap. J. App.l Phys. 25, L212 (1986)ADSCrossRefGoogle Scholar
  20. 17.
    M.A. Tischler, N.G. Anderson and S.M. Bedair, Appl. Phys. Lett. 49, 1199 (1986)ADSCrossRefGoogle Scholar
  21. 18.
    M.A. Tischler and S.M. Bedair, J. Crystal Growth 77, 89 (1986)ADSCrossRefGoogle Scholar
  22. 19.
    A. Usui and H. Sunakawa, in Proceedings of The 13th Int. Symp. on GaAs and Related Compounds, Las Vegas, 1986Google Scholar

Copyright information

© Springer Science+Business Media New York 1987

Authors and Affiliations

  • Markus Pessa
    • 1
  1. 1.Department of PhysicsTampere University of TechnologyTampereFinland

Personalised recommendations