Abstract
Over the past fifteen years research on single-crystal semiconductor superlattices has grown to be a major subfield of semiconductor physics. Thus, it is remarkable that it is only in the past three years that the first published reports of superlattices made from the prototypical amorphous semiconductor, amorphous hydrogenated silicon (a-Si:H), have appeared.1–4 The main reason for the late start of the amorphous semiconductor superlattice field may have been the widely held preconception that epitaxial growth of single crystals is required for the synthesis of high quality multilayer structures, with uniform atomically abrupt layers. Recent transmission electron microscopy work5–7 on the structure of amorphous superlattices has amply demonstrated that highly regular superlattices can be made from the a-Si:H family of materials, synthesized by low temperature (≲ 300°C) plasma-assisted chemical vapor deposition (PCVD).
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References
B. Abeles and T. Tiedje, Phys. Rev. Lett. 51:2003 (1983).
M. Hirose and S. Miyazaki, J. Non-Cryst. Solids 66:327 (1984).
M. Hundhausen, L. Ley and R. Carius, Phys. Rev. Lett. 53:1598 (1984).
J. Kakalios and H. Fritzsche, Phys. Rev. Lett. 53:1602 (1984).
H. Deckman, J. H. Dunsmuir, and B. Abeles, Appl. Phys. Lett. 46:171 (1985).
R. Cheng, S. Wen, J. Feng, and H. Fritzsche, Appl. Phys. Lett. 46:592 (1985).
C. C. Tsai, Materials Research Society Symposia Proceedings 70, 1986 (in print).
Proceedings 18th International Conference on Physics of Semiconductors Stockholm, 1986; Proc. 11th International Conference on Amorphous and Liquid Semiconductors, Editors F. Evangelisti and J. Stuke North Holland, Amsterdam 1985.
T. Tiedje, B. Abeles, P. D. Persans, B. G. Brooks, and G. D. Cody, J. of Non-Cryst. Solids 66:345 (1984).
J. Kakalios, H. Fritzsche, N. Ibaraki, and S. R. Ovshinsky, J. Non-Cryst. Solids 66:339 (1984).
Z. M. Chen, J. N. Wang, X. Y. Mei, and G. L. Kong, Solid State Commun. 58:379 (1986).
P. D. Persans, B. Abeles, J. Scanlon, and H. Stasiewski, in Proceedings of the Seventeenth International Conference on the Physics of Semiconductors, San Francisco, 1984, edited by D. J. Chadi and W. A. Harrison (Springer, New York, 1985), p. 499. C. R. Wronski, P. D. Persans and B. Abeles, Appl. Phys. Lett. (in print).
T. Tiedje, B. Abeles, and B. Brooks, Phys. Rev. Lett. 54:254 (1985).
C. R. Wronski, T. Tiedje, P. D. Persans, B. Abeles, and M. Hicks Appl. Phys. Lett. (in print).
T. Tiedje and B. Abeles, Appl. Phys. Lett. 45:179 (1984).
C. B. Roxlo, B. Abeles, and T. Tiedje, Phys. Rev. Lett 52:1994 (1984).
C. B. Roxlo and B. Abeles, Phys. Rev. B 34:2522 (1986).
S. Tsuda et al, Conference Record of 18th Photovoltaic Specialists Conference, IEEE, New York 1985, p. 1295.
R. A. Arya, A. Catalano, J. O’Dwood, J. Morris, and G. Wood ibid ref. 18 p. 1710.
D. Kruangam, M. Deguchi, T. Endo, W. Guang, P. H. Okamoto, and Y. Hamakawa 18th Int. Conf. Solid State Devices and Materials Tokyo 1986.
B. Abeles, L. Yang, P. D. Persans, H. Stasiewski, and W. Lanford, Appl. Phys. Lett. 48:168 (1986).
W. A. Lanford and B. Abeles, Nuclear Instr. and Methods in Physics Research B15, (1986).
B. Abeles, L. Yang, E. Eberhardt, and C. B. Roxlo, Proceedings 18th Int. Conf. on Physics of Semiconductors, Stockholm (1986).
P. D. Persans, A. F. Ruppert, B. Abeles, and T. Tiedje, Phys. Rev. B32:5558 (1985).
C. B. Roxlo, B. Abeles, and P. D. Persans, J. Vac. Sci. Tech. (in print).
T. Tiedje, B. G. Brooks, and B. Abeles, AIP Conf. Proc. 120:416 (1984).
B. Abeles, I. Wagner, W. Eberhardt, J. Stohr, H. Stasiewski, and F. Sette, AIP Conf. Proc. 120:394 (1984).
F. Evangelisti, P. Fiorini, C. Giovannella, F. Patella, P. Pefetti, C. Quaresima, and M. Capizzi, Appl. Phys. Lett. 44:764 (1984).
L. Yang, B. Abeles, and P. D. Persans, Appl. Phys. Lett. 49:631 (1986).
B. Abeles, T. Tiedje, T. Liang, H. W. Deckman, H. W. Stasiewski, J. C. Scanion, and P. M. Eisenberger, J. Non-Cryst. Solids 66:351 (1984).
L. Ley, J. Reichardt, and R. L. Johnson, in Proceedings of the 17th Int. Conf. Phys. of Semiconductors, San Francisco, 1984, Edited by D. J. Chadi and W. A. Harrison (Springer NY, 1985).
J. C. Phillips, Phys. Rev. Lett. 20:550 (1968)
D. E. Aspnes and J. B. Theeten, J. Appl. Phys. 50:4928 (1979).
H. Wagner and W. Beyer, Solid State Commun. 48:585 (1983).
L. Ley in the Physics of Hydrogenated Amorphous Silicon Vol. II J. D. Joannopoulos and G. Lucovsky, Editors (Springer, Berlin 1984) p. 61.
G. Hollinger and F. S. Himpsel, J. Vac. Sci. Technol. Al, 640 (1982).
T. Tiedje, J. M. Cebulka, D. L. Morel, and B. Abeles, Phys. Rev. Lett. 46:1425 (1981).
D. Zdetsis, E. N. Economu, D. A. Papaconstantopoulus, and N. Flytzanis, Phys. Rev. B31:2410 (1985).
M. L. Knotek, R. H. Stulen, G. M. Loubriel, V. Rehn, R. A. Rosenberg, and C. C. Parks, Surface Science 291 (1983).
D. Wesner and W. Eberhardt, Phys. Rev. B28:7087 (1983).
F. Evangelisti, F. Patella, R. A. Riedel, G. Margaritondo, P. Fiorini, P. Perfetti, and C. Quaresima Phys. Rev. Lett 53:2504 (1984).
A. Quattropani, F. Bassani, G. Margaritondo, and G. Tinivella, Noovocimento 51B:N.2 355 (1979).
N. W. Ashcroft and N. D. Meermin, Solid State Physics, Saunders College, Philadelphia (1976).
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Yang, L., Abeles, B. (1987). Growth and Structure of Compositionally Modulated Amorphous Semiconductor Superlattices and Heterojunctions. In: Farrow, R.F.C., Parkin, S.S.P., Dobson, P.J., Neave, J.H., Arrott, A.S. (eds) Thin Film Growth Techniques for Low-Dimensional Structures. NATO ASI Series, vol 163. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-9145-6_11
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