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Radiation Effects in Semiconductor Diodes

  • V. S. Vavilov
  • N. A. Ukhin

Abstract

The properties of semiconductor diodes, like those of other semiconductor devices are greatly influenced by irradiation. Thus, both branches of the V—I curve are changed. However, the magnitude of those changes depends on the type of semiconductor, on the design of the device and on the operating conditions. Accordingly, the radiation stability of diodes is sometimes determined by the degree of deformation of the forward V—I characteristics and sometimes by the changes in reverse characteristics. Therefore, in contrast to transistors, it is difficult to introduce a general criterion for the radiation stability of diodes.

Keywords

Fast Neutron Breakdown Voltage Minority Carrier Radiation Stability Forward Voltage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Consultants Bureau, New York 1977

Authors and Affiliations

  • V. S. Vavilov
  • N. A. Ukhin

There are no affiliations available

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