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The Theory of the Formation and Nature of Radiation-Induced Defects

  • V. S. Vavilov
  • N. A. Ukhin

Abstract

The term ‘radiation-induced defects’ refers to relatively stable lattice imperfections, produced by high-energy particles. Since single crystals are perfect bodies, their electrical and optical properties are strongly influenced by radiation-induced defects. Extensive studies on the influence of high-energy radiation on semiconductors have been carried out during the last fifteen years. Many of the investigations are concerned not only with general problems of semiconductor physics, but also with practical problems. An example of this is the study of the radiation stability of solar silicon cells used in space explorations.

Keywords

Fast Neutron Fast Electron Valence Bond Radiation Defect Defect Production 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Consultants Bureau, New York 1977

Authors and Affiliations

  • V. S. Vavilov
  • N. A. Ukhin

There are no affiliations available

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