Radiation Damage in Silicon Surface Barrier Detectors
High energy protons and associated heavy particles including neutrons are expected to be the major cause of radiation damage in silicon detectors considered for use in high energy physics experiments. Device effects to be expected are energy resolution degradation due to carrier trapping by radiation introduced defects and leakage current increase from increased generation-regeneration of carriers through the defect levels.
KeywordsCharge Collection High Energy Proton Pulse Rise Time Geometrical Capacitance Depletion Depth
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- 1.V.A.J. Van Lint, G. Gigas and J. Barengoltz, IEEE Trans. Nucl. Sci. NS-22, (1975) 2662.Google Scholar
- 2.J.R. Srour, S.C. Chen, S. Othmer and R.A. Hartman, IEEE Trans. Nucl. Sci. NS-26 (1979) 4784.Google Scholar
- 3.A.J. Stevens, Brookhaven National Laboratory, performed these calculations.Google Scholar
- 7.E.H.M. Heijne, et al., CERN/EF/BEAM 80–6, submitted to Nucl. Instrum.and Methods (1980).Google Scholar
- 8.J.M. Meese, D.L. Cowan and M. Chandrasekar, IEEE Trans. Nucl. Sci. NS-26, 6, (1979 4858.Google Scholar