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Electron-Hole Droplets in Semiconductors

  • C. Benoit à la Guillaume
Part of the NATO Advanced Science Institute Series book series (NSSB, volume 88)

Abstract

The main properties of electron-hole droplets (EHD) in semiconductors are presented, with particular emphasis on collective aspects.
  1. 1)

    The theoretical problem of EHD stability is outlined and a simple model is developped to show the effect of band structure on EHD properties. Next, the effect of coupling of electrons to Lo phonon is considered, and comparison with experimental data is given.

     
  2. 2)

    Modifications in EHD of the one electron properties are considered: mass renormalisation, effect of the electron-hole correlation on radiative or Auger lifetime.

     
  3. 3)

    The optical constants of EHD is considered in relation with FIR or IR absorption and light scattering experiments.

     
  4. 4)

    Problem of inhomogeneous electron hole liquid (EHL) is considered: surface energy, perturbation by shallow impurities or iso-electronic impurities. A critical review of the experiments available is given.

     

Keywords

Band Structure Radiative Lifetime Free Exciton Shallow Impurity Light Scattering Experiment 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1983

Authors and Affiliations

  • C. Benoit à la Guillaume
    • 1
  1. 1.Groupe de Physique des SolidesUniversité de Paris VIIParisFrance

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