Preparation of Heavily Doped Semiconductors

  • Victor I. Fistul’
Part of the Monographs in Semiconductor Physics book series (MOSEPH, volume 1)

Abstract

The properties of a growing crystal are governed primarily by the nature of the crystallizing substance and by the characteristics of the crystallization process; they are affected also by the growth conditions. The latter may depend strongly on the apparatus used. Moreover, the nature and concentration of the dopant may affect considerably the process of growth and the properties of an ingot. The latter two factors are particularly important in the case of heavily doped semiconductor single crystals.

Keywords

Crystallization Phosphorus Convection Arsenic Boron 

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Copyright information

© Plenum Press 1969

Authors and Affiliations

  • Victor I. Fistul’
    • 1
  1. 1.Institute for Fine Chemical TechnologyAcademy of Sciences of the USSRMoscowUSSR

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