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Behavior of Impurities in Heavily Doped Semiconductors

  • Victor I. Fistul’
Part of the Monographs in Semiconductor Physics book series (MOSEPH, volume 1)

Abstract

In the majority of cases with which semiconductor physics is concerned, the crystals contain relatively few impurities, which are separated by fairly large distances so that the interaction between them can be neglected, at least in the first approximation. In the heavy doping case, we must allow for the interaction between the impurities themselves, between the impurities and the host atoms, and between the impurities and the structure defects.

Keywords

Carrier Density Impurity Atom Impurity Concentration Silicon Single Crystal Dopant Atom 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press 1969

Authors and Affiliations

  • Victor I. Fistul’
    • 1
  1. 1.Institute for Fine Chemical TechnologyAcademy of Sciences of the USSRMoscowUSSR

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