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Heavily Doped Semiconductors pp 207–244Cite as

Optical Properties of Heavily Doped Semiconductors

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Part of the book series: Monographs in Semiconductor Physics ((MOSEPH,volume 1))

Abstract

Absorption Coefficient. The absorption of light by a solid is represented by an absorption coefficient α, which is defined by the expression

$$\frac{J}{{J_0 }} = \frac{{\left( {1 - R} \right)^2 }}{{e^{\Im d} - R^2 e^{ - ad} }},$$
(4.1.1)

where the left-hand side represents the ratio of the intensities of the transmitted J and incident J0 light, while R on the right-hand side represents the coefficient for a single reflection from the surface of a sample of thickness d.

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Authors and Affiliations

  1. Institute for Fine Chemical Technology, Academy of Sciences of the USSR, Moscow, USSR

    Victor I. Fistul’

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  1. Victor I. Fistul’
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© 1969 Plenum Press

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Fistul’, V.I. (1969). Optical Properties of Heavily Doped Semiconductors. In: Heavily Doped Semiconductors. Monographs in Semiconductor Physics, vol 1. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-8821-0_5

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  • DOI: https://doi.org/10.1007/978-1-4684-8821-0_5

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-8823-4

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