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Transport Phenomena in Heavily Doped Semiconductors

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Book cover Heavily Doped Semiconductors

Part of the book series: Monographs in Semiconductor Physics ((MOSEPH,volume 1))

Abstract

Transport Equation. So far we have considered carriers under statistical equilibrium conditions. We shall now deal with the processes taking place under the action of external forces (electric and magnetic fields, temperature, etc.) — processes of great practical and theoretical interest. In these processes, carriers are no longer under equilibrium conditions. We thus have phenomena associated with the ordered motion of carriers and known as transport or transfer phenomena.

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  1. Institute for Fine Chemical Technology, Academy of Sciences of the USSR, Moscow, USSR

    Victor I. Fistul’

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Fistul’, V.I. (1969). Transport Phenomena in Heavily Doped Semiconductors. In: Heavily Doped Semiconductors. Monographs in Semiconductor Physics, vol 1. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-8821-0_4

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  • DOI: https://doi.org/10.1007/978-1-4684-8821-0_4

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