Advertisement

The Quantum Nature of Amorphous Solids

  • Stanford R. Ovshinsky
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

It is fitting to discuss in this festschrift for Hellmut Fritzsche the phenomena which first interested him in the amorphous field.

Keywords

Amorphous Material Critical Field Drift Mobility Threshold Switch Mobility Edge 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    S.R. Ovshinsky, Disordered Materials: Science and Technology, ed. D. Adler, Amorphous Institute Press, 1982.Google Scholar
  2. 2.
    S.R. Ovshinsky, “Fundamentals of Amorphous Materials,” in Physical Properties of Amorphous Materials, Institute for Amorphous Studies Series, vol. 1, eds. D. Adler, B.B. Schwartz, and M.C. Steele, Plenum Press, New York, 1985.Google Scholar
  3. 3.
    S.R. Ovshinsky, “Chemistry and Structure in Amorphous Materials: The Shape of Things to Come,” in Physics of Disordered Materials, Institute for Amorphous Studies Series, eds. D. Adler, H. Fritzsche, and S.R. Ovshinsky, Plenum Press, New York, 1985. (Mott Festschrift.)Google Scholar
  4. 4.
    N.F. Mott, “Electrons in Disordered Structures,” Adv. Phys. 16, 49 (1967).ADSCrossRefGoogle Scholar
  5. 5.
    M.H. Cohen, H. Fritzsche and S.R. Ovshinsky, “Simple Band Model for Amorphous Semiconducting Alloys,” Phys. Rev. Lett. 22, 1065 (1969).ADSCrossRefGoogle Scholar
  6. 6.
    S.R. Ovshinsky, “Reversible Electrical Switching Phenomena in Disordered Structures,” Phys. Rev. Lett. 21, 1450 (1968).ADSCrossRefGoogle Scholar
  7. 7.
    M.P. Southworth, “The Threshold Switch: New Component for Ac Control,” Control Engineering 11, 69 (1964)Google Scholar
  8. 8.
    J.R. Bosnell, “Amorphous Semiconducting Films,” in Active and Passive Thin Film Devices, ed. T.J. Coutts, Academic Press, 1978, p. 288.Google Scholar
  9. 9.
    H. Fritzsche and S.R. Ovshinsky, “Electronic Conduction in Amorphous Semiconductors and the Physics of the Switching Phenomena,” J. Non-Cryst. Solids 2, 393 (1970).ADSCrossRefGoogle Scholar
  10. 10.
    E.A. Fagen and H. Fritzsche, “Electrical Conductivity of Amorphous Chalcogenide Alloy Films,” J. Non-Cryst. Solids 2, 170 (1970).ADSCrossRefGoogle Scholar
  11. 11.
    H. Fritzsche, “Physics of Instabilities in Amorphous Semiconductors,” presented at the Symposium on Instabilities in Semiconductors, IBM Watson Research Lab., Yorktown Heights, N.Y., 1969: IBM J. Res. & Dev. 13, 515 (1969).CrossRefGoogle Scholar
  12. 12.
    S.R. Ovshinsky and H. Fritzsche, “Amorphous Semiconductors for Switching, Memory, and Imaging Applications,” IEEE Trans. Electron Devices ED-20, 91 (1973).CrossRefGoogle Scholar
  13. 13.
    H. Fritzsche, “Recent Experiments on Amorphous Semiconductors,” presented at the APS March Meeting, Philadelphia 1969, Bull. APS II, 14, 342 (1969).Google Scholar
  14. 14.
    D. Adler, H.K. Henisch and N.F. Mott, “The Mechanism of Threshold Switching in Amorphous Alloys,” Rev. Mod. Phys. 50, 209 (1978).ADSCrossRefGoogle Scholar
  15. 15.
    R. Young, to be published.Google Scholar
  16. 16.
    D. Adler, M. Shur, M. Silver and S.R. Ovshinsky, “Threshold Switching in Chalcogenide-Glass Thin Films,” J. Appl. Phys. 51, 3289 (1980).ADSCrossRefGoogle Scholar
  17. 17.
    R.W. Pryor and H.K. Henisch, “Nature of the 0N-State in Chalcogenide Glass Threshold Switches,” J. Non-Cryst. Solids 7, 181 (1972).ADSCrossRefGoogle Scholar
  18. 18.
    K.E. Petersen and D. Adler, “Probe of the Properties of the On-State Filament,” J. Appl. Phys. 47, 256 (1976).ADSCrossRefGoogle Scholar
  19. 19.
    S.R. Ovshinsky, “Localized States in the Gap of Amorphous Semiconductors,” Phys. Rev. Lett. 36, 1469 (1976).ADSCrossRefGoogle Scholar
  20. 20.
    S.R. Ovshinsky, “Amorphous Materials As Interactive Systems,” Proc. 6th Intl. Conf. on Amorphous and Liquid Semiconductors, Leningrad, 1975: Structure and Properties of Non-Crystalline Semiconductors, ed., B.T. Kolomiets, Nauka, Leningrad, 1976, p. 426.Google Scholar
  21. 21.
    S.R. Ovshinsky, “Lone-Pair Relationships and the Origin of Excited States in Amorphous Chalcogenides,” AIP Conf. Proc. 31, 31 (1976).ADSCrossRefGoogle Scholar
  22. 22.
    S.R. Ovshinsky and K. Sapru, “Three-Dimensional Model of Structure and Electronic Properties of Chalcogenide Glasses,” Proc. 5th Intl. Conf. on Amorphous and Liquid Semiconductors, Garmisch-Partenkirchen, Germany 1973: eds. J. Stuke and W. Brenig, Taylor and Francis, London, 1974, p. 447.Google Scholar
  23. 23.
    M. Kastner, “Bonding Bands, Lone-Pair Bands, and Impurity States in Chalcogenide Semiconductors,” Phys. Rev. Lett. 28, 355 (1972).ADSCrossRefGoogle Scholar
  24. 24.
    M. Kastner, D. Adler and H. Fritzsche, “Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors,” Phys. Rev. Lett. 37, 1504 (1976).ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • Stanford R. Ovshinsky
    • 1
  1. 1.Energy Conversion Devices, Inc.TroyUSA

Personalised recommendations