Reflectivity Studies of the Te(Ge,As)-Based Amorphous Semiconductor in the Conducting and Insulating States

  • J. Feinleib
  • S. R. Ovshinsky
Part of the Institute for Amorphous Studies Series book series (IASS)


In the first paper of this conference, Prof. Stuke presented a detailed review of the optical and electrical properties of the basic materials, Se, Ge and Te, which can be formed in both the amorphous and crystalline form1). In the final day of this meeting we would like to tie the basic physics learned from these discussions to more material ends — that is to the design of materials which can be utilized for the basic differences between crystal and amorphous forms and, in particular, the differences in optical properties.


Amorphous Phase Oscillator Strength Amorphous State Optical Constant Amorphous Semiconductor 
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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • J. Feinleib
    • 1
  • S. R. Ovshinsky
    • 1
  1. 1.Energy Conversion Devices, Inc.TroyUSA

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