An Introduction to Ovonic Research

  • S. R. Ovshinsky
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

This paper will briefly review our past work in amorphous switching and discuss some of the operational concepts underlying our continued effort. In the past, periodicity of atomic structure has been the basis of the understanding of solid state physics. Part of the problem in understanding the amorphous state is the terms themselves, for the words “disordered” and “amorphous” for non-crystalline materials have misleading connotations as they project an image of a material with lack of specific structure. In this paper we will describe some of our working hypotheses which pay particular attention to spatial relationships of the localized structural units as a means of developing unusual electronic and electrical changes in amorphous materials.

Keywords

Amorphous Material Memory Switch Memory Action Anodic Oxide Film Threshold Switching 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    This idea guided Mooser and Pearson to predict semiconducting behavior in a large variety of crystalline materials. See E. Mooser and W.B. Pearson, Can. J. Phys. 34 (1956) 1369.ADSCrossRefGoogle Scholar
  2. 2.
    For references to their work see A.F. Ioffe and A.R. Regel, Non-Crystalline, Amorphous, and Liquid Electronic Semiconductors, in: Progress in Semiconductors, Vol. 4, Ed. A.F. Gibson (Wiley, New York, 1960) pp. 237–291.Google Scholar
  3. 3a.
    For references to their work see B.T. Kolomiets, Phys. Status Solidi 7 (1964) 359,CrossRefGoogle Scholar
  4. 3b.
    For references to their work see B.T. Kolomiets, Phys. Status Solidi 7 (1964) 713.CrossRefGoogle Scholar
  5. 4.
    For a discussion of electronic properties of amorphous materials see J. Tauc, Science 158 (1967) 1543.ADSCrossRefGoogle Scholar
  6. 5.
    S.R. Ovshinsky, Electronics 32. (1959) 76.Google Scholar
  7. 6.
    S.R. Ovshinsky, Control Engineering 6 (1959) 121.Google Scholar
  8. 7.
    L. Young, Anodic Oxide Films (Academic Press, New York, 1961) pp. 147–149.Google Scholar
  9. 8.
    S.R. Ovshinsky, The Physical Base of Intelligence—Model Studies, presented at Detroit Physiological Society, Dec. 17, 1959.Google Scholar
  10. 9.
    S.R. Ovshinsky, Symmetrical Current Controlling Device, U.S. Patent No. 3,271,591.Google Scholar
  11. 10.
    S.R. Ovshinsky, Phys. Rev. Letters 21 (1968) 1450.ADSCrossRefGoogle Scholar
  12. 11.
    A.D. Pearson, W.R. Northover, J.F. Dewald and W.F. Peck ,Jr., Chemical, Physical and Electrical Properties of Some Unusual Inorganic Glasses, in: Advances in Glass Technology (Plenum Press, New York, 1962) pp. 357–365.Google Scholar
  13. 12.
    A.D. Pearson, uyen in: Proc. Symp. on Instabilities in Semiconductors, IBM Watson Research Center, Yorktown Heights, New York, March 1969.Google Scholar
  14. 13.
    S.R. Ovshinsky, The Ovonic Switch as an Amorphous Switching Device, presented at IV Symposium on Vitreous Chalcogenide Semiconductors, Acad. Sci., USSR, Leningrad, 1967.Google Scholar
  15. 14.
    S.R. Ovshinsky, Ovonic Switching Devices, presented at Intern. Colloq. on Amorphous and Liquid Semiconductors, Acad. Soc. Repub. Rumania, Bucharest, 1967.Google Scholar
  16. 15.
    S.R. Ovshinsky, Ovonic Switching Devices, Proc. of 1968 Electronic Components Conf., Washington, D.C., 1968, p. 313.Google Scholar
  17. 16.
    N.F. Mott, Advan. Phys. 16 (1967) 49.ADSCrossRefGoogle Scholar
  18. 17.
    H. Fritzsche, Physics of Instabilities in Amorphous Semiconductors, Symp. on Instabilities in Semiconductors, IBM Watson Research Laboratory, Yorktown Heights, New York, March 1969.Google Scholar
  19. 18.
    H. Fritzsche, Bull. Am. Phys. Soc. [II] 14 (1969) 342.Google Scholar
  20. 19.
    H. Fritzsche and S.R. Ovshinsky, J. Non-Crystalline Solids 2 (1970) 148.ADSCrossRefGoogle Scholar
  21. 20.
    B.K. Ridley, Proc. Phys. Soc. (London) 82 (1963) 996.CrossRefGoogle Scholar
  22. 21.
    A. Bienenstock, F. Betts and S.R. Ovshinsky, J. Non-Crystalline Solids 2 (1970) 347.ADSCrossRefGoogle Scholar
  23. 22.
    E.J. Evans, J.H. Helbers and S.R. Ovshinsky, J. Non-Crystalline Solids 2 (1970) 334.ADSCrossRefGoogle Scholar
  24. 23.
    Effects of this nature were observed in the form of an increase in the resistivity of evaporated films of Ge and Si as a result of heat treatment. For a review see P.A. Walley and A.K. Jonscher, Thin Solid Films 1 (1968) 367.ADSCrossRefGoogle Scholar
  25. 24.
    M.H. Cohen, H. Fritzsche and S.R. Ovshinsky, Phys. Rev. Letters 22 (1969) 1065.Google Scholar
  26. 25.
    H. Fritzsche and S.R. Ovshinsky, J. Non-Crystalline Solids 2 (1970) 393.ADSCrossRefGoogle Scholar
  27. 26.
    M.H. Cohen, J. Non-Crystalline Solids 2 (1970) 432.ADSCrossRefGoogle Scholar
  28. 27.
    E.A. Fagen, S.R. Ovshinsky and H. Fritzsche, Bull. Am. Phys. Soc. [II] 14 (1969) 311.Google Scholar
  29. 28.
    H. Fritzsche, E.A. Fagen and S.R. Ovshinsky, Bull. Am. Phys. Soc. [II] 14 (1969) 311.Google Scholar
  30. 29.
    E.A. Fagen and H. Fritzsche, J. Non-Crystalline Solids 2 (1970) 170.ADSCrossRefGoogle Scholar
  31. 30.
    E.A. Fagen and H. Fritzsche, J. Non-Crystalline Solids 2 (1970) 180.ADSCrossRefGoogle Scholar
  32. 31.
    K.W. Böer, J. Non-Crystalline Solids 2 (1970) 444.ADSCrossRefGoogle Scholar
  33. 32.
    H.K. Henisch, personal communication.Google Scholar
  34. 33.
    R.G. Neale, J. Non-Crystalline Solids 2 (1970) 558.ADSCrossRefGoogle Scholar
  35. 34.
    G.R. Fleming, J. Non-Crystalline Solids 2 (1970) 540.ADSCrossRefGoogle Scholar
  36. 35.
    D.L. Nelson, J. Non-Crystalline Solids 2 (1970) 528.ADSCrossRefGoogle Scholar
  37. 36.
    S.R. Ovshinsky and D.L. Nelson, Ovonic Switches and Their Application, Proc. IEEE Intern. Convention, New York, March 1969.Google Scholar
  38. 37.
    S.R. Ovshinsky, E.J. Evans, D.L. Nelson and H. Fritzsche, Radiation Hardness of Ovonic Devices, IEEE Trans. Nuclear Science (Dec. 1968) p. 304.Google Scholar
  39. 38.
    R.R. Shanks, J. Non-Crystalline Solids 2 (1970) 504.ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • S. R. Ovshinsky
    • 1
  1. 1.Energy Conversion Devices, Inc.TroyUSA

Personalised recommendations