Structural Studies of Amorphous Semiconductors
This paper describes structural studies of the reversible memory type electrical transition1) in amorphous films of Ge-Te2) based alloys. The films, as evaporated, are high resistance intrinsic-like semiconductors. After subjection to a sufficiently high electrical field to bring about a transition to a low resistance state, and a further delay during which there is current flow, a portion of the material is transformed to a semipermanent low resistance state. That is, the material remains in a low resistance state without further application of an electric field. The material may be switched back to a high resistance state through application of a current pulse with a rapid turn off. This paper reports initial results of studies designed to elucidate structural aspects of the phase transition in these materials.
KeywordsRadial Distribution High Resistance State Short Duration Pulse Flash Lamp Nuclear Magnetic Resonance Line
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- 1).S. R. Ovshinsky, Control Engineering 11 (1964) 69; Talk at Intern. Colloq. on Amorphous and Liquid Semiconductors, Bucharest, 1967; U.S. Patent No. 3,271,591.Google Scholar
- 2).H. Fritzsche and S. R. Ovshinsky, J. Non-Crystalline Solids 2 (1970) 148, 393.Google Scholar
- 3).A. R. Hilton, C. E. Jones, R. D. Dobrott, H. M. Klein, A. M. Bryant and T. D. George, Phys. Chem. Glasses 4 (1966) 116.Google Scholar
- 4).K. L. Chopra and S. K. Bahl, Bull. Am. Phys. Soc. 14 (1968) 98.Google Scholar
- 6).R. F. Kruh, in: Handbook of X-Rays, Ed. E. F. Kaelble (McGraw-Hill, New York, 1967).Google Scholar
- 8).International Tables for X-Ray Crystallography, Vol. 3 (Kynoch Press, Birmingham, 1962).Google Scholar