Effects of Transition-Metal Elements on Tellurium Alloys for Reversible Optical-Data Storage

  • R. T. Young
  • D. Strand
  • J. Gonzalez-Hernandez
  • S. R. Ovshinsky
Part of the Institute for Amorphous Studies Series book series (IASS)


The use of chalcogenide alloys for optical data storage was first reported by Ovshinsky in 1970.1 He and co-workers discovered that reversible phase-change phenomena can be accomplished in several chalcogenide films using a focused laser beam.2,3 In phase-change reversible data recording, the material requirements are intimately related to various parameters associated with system design such as available power from the semiconductor laser, spot sizes used for recording and erasing, disk-rotation speed, etc. Clearly, the material should be sensitive enough that the laser-power density and beam-dwell times are sufficient to complete the amorphous-crystalline-phase transformation. Furthermore, the optical properties of the recorded (amorphous) and erased (crystalline) areas should remain invariant upon cycling and be stable upon long-term storage.


Crystallization Rate Material Research Society Crystallite Orientation Chalcogenide Film Static Test Experiment 
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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • R. T. Young
    • 1
  • D. Strand
    • 1
  • J. Gonzalez-Hernandez
    • 1
  • S. R. Ovshinsky
    • 1
  1. 1.Energy Conversion Devices, Inc.TroyUSA

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