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Amorphous Semiconductors for Microelectronics

  • Stanford R. Ovshinsky
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

The solid-state revolution, which began in 1947 with the invention of the transistor, was made possible by the ability to make crystalline materials (at that time germanium) sufficiently free of defects that substitutional dopants could overcome the background noise of other defects and control the electronic transport properties of the semiconductor. Since the early 1930’s Bloch, Wilson, and others had laid a sufficient theoretical groundwork in semiconductors so that transistor action could be predicted, demonstrated, and understood even though the point contact transistor had many mysteries associated with it. Figure 1 shows that historical lever that moved the world, the first transistor.

Keywords

Defect Density Crystalline Silicon Gallium Arsenide Amorphous Semiconductor Gate Delay 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    G. Dan Hutcheson, “Superchips: The New Frontier,” Business Week, June 10, 1985, p. 84.Google Scholar
  2. 2.
    H. Yukawa, Creativity and Intuition: A Physicist Looks at East and West, (Kodansha International Ltd., Tokyo, 1973).Google Scholar
  3. 3.
    Z. Yaniv, H. Hansell, M. Vijan, and V. Cannella, “A 1 Micrometer Channel Length Amorphous-Silicon Alloy Thin-Film Field-Effect Transistor,” Proceedings of Mat. Res. Soc. Symp. 31, 293 (1984).CrossRefGoogle Scholar
  4. 4.
    Z. Yaniv, V. Cannella, J. Hansell, C. Wilner, and M. Vijan, “Novel Thin-Film Amorphous Silicon Alloy Approach to Drive Active Matrices Displays,” Mol. Cryst. Liq. Cryst. 129, 149 (1985).CrossRefGoogle Scholar
  5. 5.
    S.R. Ovshinsky, “Reversible Electrical Switching Phenomena in Disordered Structures,” Phys. Rev. Lett. 21, 1450–1453 (1968).ADSCrossRefGoogle Scholar
  6. 6.
    S.R. Ovshinsky, “An Introduction to Ovonic Research,” J. Non-Cryst. Solids 2, 99–106 (1970).ADSCrossRefGoogle Scholar
  7. 7.
    D. Adler, M.S. Shur, M. Silver, and S.R. Ovshinsky, “Threshold Switching in Chalcogenide-Glass Thin Films,” J. Appl. Phys. 51, 3289–3309 (1980).ADSCrossRefGoogle Scholar
  8. 8.
    M. Hack, W. Czubatyj, and M. Shur, to be published.Google Scholar
  9. 9.
    S.R. Ovshinsky, to be published.Google Scholar
  10. 10.
    J.A. Perschy, “On the Threshold of Success: Glass Semiconductor Circuits,” Electronics, July 24, 1967, p. 74.Google Scholar
  11. 11.
    R.G. Neale, D.L. Nelson, and G.E. Moore, “Nonvolatile and Reprogrammable, the Read-Mostly Memory is Here,” Electronics, September 28, 1970, p. 56.Google Scholar
  12. 12.
    S.R. Ovshinsky, “The Ovshinsky Switch,” in Proc. of the Fifth Annual National Conf. on Industrial Research, Chicago, (1969), 86–90.Google Scholar
  13. 13.
    L. Lessing, “Great Hopes from Ovshinsky’s Little Switches Grow,” Fortune, April 1970, p. 110.Google Scholar
  14. 14.
    “The Printed Word Goes Electronic,” Fortune, September 1969, p. 116.Google Scholar
  15. 15.
    S.J. Hudgens, “Amorphous Silicon for Electrophotography,” paper presented at this conference.Google Scholar
  16. 16.
    M. Shur, C. Hyun, M. Hack, and W. Czubatyj, “Amorphous Silicon Alloy Thin-Film Transistor Operation with High Field-Effect Mobility,” paper presented at this conference.Google Scholar
  17. 17.
    Z. Yaniv, V. Cannella, A. Lien, J. McGill, and W. denBoer, “Progress in Two- and Three-Terminal Amorphous Silicon Switching Devices for Matrix Addressed LCDs,” paper presented at this conference.Google Scholar
  18. 18.
    V. Cannella, J. McGill, and Z. Yaniv, “Bulk Limitation Effects in Amorphous Silicon Alloy Diodes,” paper presented at this conference.Google Scholar
  19. 19.
    S.R. Ovshinsky and I.M. Ovshinsky, “Analog Models for Information Storage and Transmission in Physiological Systems,” Mat. Res. Bull. 5, 681–690 (1970). (Mott Festschrift.)CrossRefGoogle Scholar
  20. 20.
    S.R. Ovshinsky, “New Amorphous Materials for Computer Use,” Digest of Papers, Spring CompCon 1979, 18th IEEE Computer Society International Congress, San Francisco, CA, February 26-March 1, 158–161-C.Google Scholar
  21. 21.
    For early references, see S.R. Ovshinsky, “Fundamentals of Amorphous Materials,” in Physical Properties of Amorphous Materials, ed. by David Adler, Brian B. Schwartz, and Martin C. Steele, (Institute for Amorphous Studies Series, Plenum Publishing Corporation, 1985), 105–155. See also Fundamentals of Amorphous Semiconductors, Report of the Ad Hoc Committee on the Fundamentals of Amorphous Semiconductors, (National Academy of Sciences, 1972).Google Scholar
  22. 22.
    See, for example, U.S. Patent # 3,530,441, “Method and Apparatus for Storing and Retrieving Information.”Google Scholar

Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • Stanford R. Ovshinsky
    • 1
  1. 1.Energy Conversion Devices, Inc.TroyUSA

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