Metal-Insulator-Semiconductor Solar Cells Using Amorphous Si:F:H Alloys
Amorphous hydrogenated silicon (a-Si:H) alloys produced from the radio-frequency glow discharge of SiH4 gas have been studied extensively in recent years(1). Thin-film photovoltaic devices have been fabricated from these alloys in Schottky barrier2 metal-insulator-semiconductor (MIS),3 and p-i-n 4 configurations with conversion efficiencies of up to 5.5, 4.8, and 4.5%, respectively.*
KeywordsReciprocal Temperature Antireflection Coating Maximum Power Point Effective Barrier Height Diode Ideality Factor
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