New Thin-Film Tunnel Triode Using Amorphous Semiconductors
A tunnel triode was fabricated using A12O3 dielectric to form the hot-electron tunnel cathode and an amorphous film of As34Te28Ge16S21Se1 to separate the base and collector. The structure of the device is shown in Fig. 1. The electrodes were all aluminum. A 2000-Å emitter electrode was evaporated onto a glass substrate and anodized to form an A12O3 layer 125 Å thick as described by Onn and Silver.1 This was then coated with a 125-Å Al layer to form the base electrode followed by a 1500-A sputtered layer of the amorphous material over which was subsequently deposited a 2000-Å collector electrode.
KeywordsCollector Current Minority Carrier Amorphous Layer Amorphous Semiconductor Base Electrode
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- 4.D.V. Geppert, Proc. IRE 48, 1644 (1960).Google Scholar