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New Thin-Film Tunnel Triode Using Amorphous Semiconductors

  • R. F. Shaw
  • H. Fritzsche
  • M. Silver
  • P. Smejtek
  • S. Holmberg
  • S. R. Ovshinsky
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

A tunnel triode was fabricated using A12O3 dielectric to form the hot-electron tunnel cathode and an amorphous film of As34Te28Ge16S21Se1 to separate the base and collector. The structure of the device is shown in Fig. 1. The electrodes were all aluminum. A 2000-Å emitter electrode was evaporated onto a glass substrate and anodized to form an A12O3 layer 125 Å thick as described by Onn and Silver.1 This was then coated with a 125-Å Al layer to form the base electrode followed by a 1500-A sputtered layer of the amorphous material over which was subsequently deposited a 2000-Å collector electrode.

Keywords

Collector Current Minority Carrier Amorphous Layer Amorphous Semiconductor Base Electrode 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    G. Onn and M. Silver, Phys. Rev. 183, 295 (1969).ADSCrossRefGoogle Scholar
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    J.F. Delord, Appl. Phys. Letters 11, 287 (1967).ADSCrossRefGoogle Scholar
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    C.A. Mead, J. Appl. Phys. 32, 646 (1961).ADSCrossRefGoogle Scholar
  4. 4.
    D.V. Geppert, Proc. IRE 48, 1644 (1960).Google Scholar
  5. 5.
    R.N. Hall, Solid-State Electron. 3, 320 (1961).CrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • R. F. Shaw
    • 1
  • H. Fritzsche
    • 2
  • M. Silver
    • 3
  • P. Smejtek
    • 3
  • S. Holmberg
    • 4
  • S. R. Ovshinsky
    • 4
  1. 1.Esso Research and Engineering CompanyLindenUSA
  2. 2.James Franck InstituteUniversity of ChicagoChicagoUSA
  3. 3.University of North CarolinaChapel HillUSA
  4. 4.Energy Conversion DevicesTroyUSA

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