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Reversible High-Speed High-Resolution Imaging in Amorphous Semiconductors

  • S. R. Ovshinsky
  • P. H. Klose
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

Energetic processes have been described for fast and controllable ordering and disordering of amorphous semiconductors.(1, 2, 3, 4, 5) Concomitant with these changes are alterations of various physical parameters, all of which we use for the temporary or permanent storage and display of information (6). The present paper reports on some physical characteristics associated with photostructural changes reflecting imaging processes in amorphous materials.

Keywords

Image Area Amorphous Semiconductor Nucleate Point Present Paper Report Permanent Storage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • S. R. Ovshinsky
    • 1
  • P. H. Klose
    • 1
  1. 1.Energy Conversion Devices, Inc.TroyUSA

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