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Radiation Hardness of Ovonic Devices

  • Stanford R. Ovshinsky
  • E. J. Evans
  • D. L. Nelson
  • H. Fritzsche
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

If a semiconductor device is irradiated by, for instance, X-rays a large number of electron-hole pairs are created which cause a change in the equilibrium currents. Sometimes these changes are enhanced by appreciable gain factors of the device and remain long after the radiation pulse has ceased. Neutron radiation causes atomic displacements and lattice defects which, in turn, result in electrically active centers or traps in the gap and, thereby, alter the bulk and surface properties of the semiconducting material.

Keywords

Threshold Voltage Fast Neutron Delay Line Power Supply Voltage Amorphous Semiconductor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • Stanford R. Ovshinsky
    • 1
  • E. J. Evans
    • 1
  • D. L. Nelson
    • 1
  • H. Fritzsche
    • 2
  1. 1.Energy Conversion Devices, Inc.TroyUSA
  2. 2.James Franck InstituteUniversity of ChicagoChicagoUSA

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